X-On Electronics has gained recognition as a prominent supplier of FERD20H60CG-TR Rectifiers across the USA, India, Europe, Australia, and various other global locations. FERD20H60CG-TR Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

FERD20H60CG-TR STMicroelectronics

FERD20H60CG-TR electronic component of STMicroelectronics
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Part No.FERD20H60CG-TR
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers Field-Effect Rectifier Diode 60V
Datasheet: FERD20H60CG-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4082 ea
Line Total: USD 0.41 
Availability - 6
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
237
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4169
10 : USD 0.4154
25 : USD 0.4138
100 : USD 0.4122

6
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4082

1940
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.5265
2000 : USD 0.5265
3000 : USD 0.5265
4000 : USD 0.5265
5000 : USD 0.5265

970
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1967
10 : USD 1.084
30 : USD 1.0229
100 : USD 0.9522
500 : USD 0.9216
1000 : USD 0.9081

237
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 17
Multiples : 1
17 : USD 0.4154
25 : USD 0.4138
100 : USD 0.4122

970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 549
Multiples : 1
549 : USD 0.8889
1000 : USD 0.8395

970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 549
Multiples : 1
549 : USD 0.8889
1000 : USD 0.8395

   
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Vr - Reverse Voltage
If - Forward Current
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Ir - Reverse Current
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We are delighted to provide the FERD20H60CG-TR from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FERD20H60CG-TR and other electronic components in the Rectifiers category and beyond.

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FERD20H60C 60 V field-effect rectifier diode Datasheet - production data Description A1 K The device is based on a proprietary technology A2 that achieves the best in class V /I trade-off for a F R given silicon surface. K K This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. A2 This device is suitable for use in adapters and A1 A2 K chargers. A1 TO-220AB DPAK Table 1: Device summary Symbol Value IF(AV) 2 x 10 A Features V 60 V RRM ST advanced rectifier process VF (typ.) 0.39 V Stable leakage current over reverse voltage T (max.) 175 C j Reduced leakage current Low forward voltage drop High frequency operation September 2017 DocID030963 Rev 1 1/12 www.st.com This is information on a product in full production. Characteristics FERD20H60C 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, per diode, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V I Forward rms current 30 A F(RMS) Per diode 10 Average forward current = 0.5, IF(AV) TC = 155 C A square wave Per device 20 Surge non repetitive forward IFSM tp = 10 ms sinusoidal 130 A current Tstg Storage temperature range -65 to +175 C (1) T Maximum operating junction temperature +175 C j Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal resistance parameters Symbol Parameter Max. value Unit Per diode 2.2 R Junction to case th(j-c) Per device 1.3 C/W Coupling Rth(c) 0.4 Table 4: Static electrical characteristics, per diode Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 200 A j V = V R RRM (1) IR Reverse leakage current Tj = 125 C - 10 20 mA T = 125 C V = 45 V - 6 12 j R Tj = 25 C - 0.34 0.38 IF = 2 A Tj = 125 C - 0.28 0.315 Tj = 25 C - 0.415 0.465 (2) VF Forward voltage drop IF = 5 A V T = 125 C - 0.39 0.435 j Tj = 25 C - 0.52 0.575 IF = 10 A T = 125 C - 0.525 0.585 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.285 x I + 0.03 x I F(AV) F (RMS) 2/12 DocID030963 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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