FERD20U60DJF-TR STMicroelectronics

FERD20U60 Field effect rectifier Datasheet production data Description A A This single rectifier is based on a proprietary technology, enabling to achieve the best in class K V /I trade-off for a given silicon surface. F R A Packaged in PowerFLAT 5x6, this device is A intended to be used in rectification and freewheeling operations in switch-mode power supplies. K K Table 1. Device summary Symbol Value I 20 A F(AV) V 60 V RRM A T +150 C A j (max) V (typ) 350 mV F PowerFLAT 5x6 FERD20U60DJF Features ST proprietary process Stable leakage current over reverse voltage Low forward voltage drop High frequency operation TM: PowerFLAT is a trademark of STMicroelectronics June 2014 DocID025986 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics FERD20U60 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C, unless otherwise specified anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms current 45 A F(RMS) I Average forward current, = 0.5 T = 115 C 20 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 180 A FSM p T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature 150 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value (max) Unit R Junction to case 2.6 C/W th(j-c) Table 4. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 800 A j (1) I Reverse leakage current V = V R R RRM T = 125 C 30 70 mA j T = 25 C 0.380 0.425 j I = 10 A F T = 125 C 0.350 0.400 j (2) V Forward voltage drop V F T = 25 C 0.465 0.510 j I = 20 A F T = 125 C 0.465 0.505 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.295 x I + 0.0105 I F(AV) F (RMS) 2/8 DocID025986 Rev 2