X-On Electronics has gained recognition as a prominent supplier of FERD40M45CG-TR Rectifiers across the USA, India, Europe, Australia, and various other global locations. FERD40M45CG-TR Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

FERD40M45CG-TR STMicroelectronics

FERD40M45CG-TR electronic component of STMicroelectronics
FERD40M45CG-TR STMicroelectronics
FERD40M45CG-TR Rectifiers
FERD40M45CG-TR  Semiconductors

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See Product Specifications
Part No. FERD40M45CG-TR
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers Field Effect Rectifier
Datasheet: FERD40M45CG-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.953 ea
Line Total: USD 0.95 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1
Multiples : 1
1 : USD 0.953
10 : USD 0.3146
25 : USD 0.3115
50 : USD 0.3085
100 : USD 0.3037
250 : USD 0.3006
500 : USD 0.298
1000 : USD 0.2854
3000 : USD 0.2784
6000 : USD 0.2756
15000 : USD 0.273
30000 : USD 0.2701
75000 : USD 0.2675

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1000
Multiples : 1000
1000 : USD 1.1972
2000 : USD 1.1086
3000 : USD 1.1086
4000 : USD 1.1086
5000 : USD 1.1086

0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 5.8911
10 : USD 2.1258
100 : USD 1.7147

0
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 1000
Multiples : 1000
1000 : USD 0.8359
2000 : USD 0.8359

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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Operating Temperature Range
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We are delighted to provide the FERD40M45CG-TR from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FERD40M45CG-TR and other electronic components in the Rectifiers category and beyond.

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FERD40M45C Field effect rectifier Datasheet - production data Description A1 This dual rectifier is based on a proprietary K technology that achieves the best in class V /I F R A2 for a given silicon surface. K 2 Packaged in TO-220AB, and D PAK, this device K is intended to be used in switch mode power supplies, or automotive applications A2 Table 1. Device summary A2 K A1 A1 I 2 x 20 A F(AV) 2 TO-220AB D PAK V 45 V RRM FERD40M45CG FERD40M45CT V (typ) 0.34 V F Features ST advanced rectifier process Stable leakage current over reverse voltage Low forward voltage drop High frequency operation November 2013 DocID024889 Rev 1 1/10 This is information on a product in full production. www.st.comCharacteristics FERD40M45C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode at 25 C, unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 40 A F(RMS) T =150 C Per diode 20 c I Average forward current, = 0.5 A F(AV) T =140 C Per device 40 c I Surge non repetitive forward current t = 10 ms sinusoidal 275 A FSM p T Storage temperature range -65 to + 175 C stg 2 175 TO-220AB, D PAK Maximum operating junction T C (1) 2 j temperature D PAK (DC forward current without 200 reverse bias, t = 1 hour) dPtot 1 --------------- -------------------------- 1. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistances Symbol Parameter Value Unit Per diode 1.6 R Junction to case C/W th (j-c) Total 1.1 R Coupling 0.5 C/W th(c) When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode1) x R (Per diode) + P(diode2) x R . j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test Conditions Min. Typ. Max. Unit T = 25 C 650 A j (1) I Reverse leakage current V = V R R RRM T = 125 C 25 50 mA j T = 25 C 0.38 0.415 j I = 10 A F T = 125 C 0.34 0.37 j (2) V Forward voltage drop V F T = 25 C 0.46 0.50 j I = 20 A F T = 125 C 0.46 0.50 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.31 x I + 0.0095 I F(AV) F (RMS) 2/10 DocID024889 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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