M24C32-RDW6TP STMicroelectronics

M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF 32-Kbit serial IC bus EEPROM Datasheet - production data Features 2 Compatible with all I C bus modes: 1 MHz 400 kHz 100 kHz PDIP8 (BN) Memory array: 32 Kbit (4 Kbyte) of EEPROM Page size: 32 byte Additional Write lockable page (M24C32-D order codes) Single supply voltage: 1.7 V to 5.5 V over 40 C / +85 C TSSOP8 (DW) SO8 (MN) 169 mil width 150 mil width 1.6 V to 5.5 V over 20 C / +85 C Write: Byte Write within 5 ms Page Write within 5 ms Random and sequential Read modes Write protect of the whole memory array UFDFPN5 (MH) UFDFPN8 (MC) Enhanced ESD/Latch-Up protection DFN8 - 2x3 mm DFN5 - 1.7x1.4 mm More than 4 million Write cycles More than 200-years data retention Packages PDIP8 ECOPACK2 WLCSP (CU) SO8 ECOPACK2 TSSOP8 ECOPACK2 UFDFPN8 ECOPACK2 WLCSP ECOPACK2 UFDFPN5 ECOPACK2 Unsawn wafer (each die is tested) Unsawn wafer September 2017 DocID4578 Rev 30 1/51 This is information on a product in full production. www.st.comContents M24C32-W M24C32-R M24C32-F M24C32-X M24C32-DF Contents 1 Description . 6 2 Signal description . 8 2.1 Serial Clock (SCL) . 8 2.2 Serial Data (SDA) 8 2.3 Chip Enable (E2, E1, E0) 8 2.4 Write Control (WC) . 8 2.5 V (ground) . 9 SS 2.6 Supply voltage (V ) . 9 CC 2.6.1 Operating supply voltage (V ) 9 CC 2.6.2 Power-up conditions 9 2.6.3 Device reset . 9 2.6.4 Power-down conditions 9 3 Memory organization . 10 4 Device operation . 11 4.1 Start condition 12 4.2 Stop condition 12 4.3 Data input . 12 4.4 Acknowledge bit (ACK) 12 4.5 Device addressing 13 5 Instructions . 14 5.1 Write operations 14 5.1.1 Byte Write . 15 5.1.2 Page Write . 16 5.1.3 Write Identification Page (M24C32-D only) 17 5.1.4 Lock Identification Page (M24C32-D only) 17 5.1.5 ECC (Error Correction Code) and Write cycling 17 5.1.6 Minimizing Write delays by polling on ACK 18 5.2 Read operations 19 5.2.1 Random Address Read . 20 2/51 DocID4578 Rev 30