M95040-DRDW3TPK STMicroelectronics

M95040-A125 M95040-A145 Automotive 4-Kbit serial SPI bus EEPROMs with high-speed clock Datasheet - production data Features Compatible with the Serial Peripheral Interface (SPI) bus Memory array SO8 (MN) 4 Kbit (512 byte) of EEPROM 150 mil width Page size: 16 byte Write protection by block: 1/4, 1/2 or whole memory Additional Write lockable Page (Identification page) TSSOP8 (DW) Extended temperature and voltage ranges 169 mil width Up to 125 C (V from 1.7 V to 5.5 V) CC Up to 145 C (V from 2.5 V to 5.5 V) CC High speed clock frequency 20 MHz for V 4.5 V CC 10 MHz for V 2.5 V CC 5 MHz for V 1.7 V CC WFDFPN8 (MF) Schmitt trigger inputs for noise filtering 2 x 3 mm Short Write cycle time Byte Write within 4 ms Page Write within 4 ms Write cycle endurance 4 million Write cycles at 25 C 1.2 million Write cycles at 85 C 600 k Write cycles at 125 C 400 k Write cycles at 145 C Data retention 50 years at 125 C 100 years at 25 C ESD Protection (Human Body Model) 4000 V Packages RoHS-compliant and halogen-free (ECOPACK2 ) February 2016 DocID024225 Rev 6 1/41 This is information on a product in full production. www.st.comContents M95040-A125 M95040-A145 Contents 1 Description . 6 2 Signal description . 8 2.1 Serial Data output (Q) 8 2.2 Serial Data input (D) 8 2.3 Serial Clock (C) . 8 2.4 Chip Select (S) 8 2.5 Hold (HOLD) 8 2.6 Write Protect (W) 8 2.7 V ground . 8 SS 2.8 V supply voltage . 9 CC 3 Operating features . 10 3.1 Active power and Standby power modes . 10 3.2 SPI modes 10 3.3 Hold mode .11 3.4 Protocol control and data protection 11 3.4.1 Protocol control . 11 3.4.2 Status Register and data protection 12 3.5 Identification page 13 4 Instructions . 14 4.1 Write Enable (WREN) . 15 4.2 Write Disable (WRDI) 15 4.3 Read Status Register (RDSR) . 16 4.4 Write Status Register (WRSR) . 17 4.5 Read from Memory Array (READ) 18 4.6 Write to Memory Array (WRITE) . 19 4.7 Read Identification Page (RDID) . 21 4.8 Write Identification Page (WRID) . 22 4.9 Read Lock Status (RDLS) 22 4.10 Lock Identification Page (LID) . 23 2/41 DocID024225 Rev 6