X-On Electronics has gained recognition as a prominent supplier of SCT1000N170 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. SCT1000N170 SiC MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

SCT1000N170 STMicroelectronics

Name: SCT1000N170
Brand: STMicroelectronics
SKU: SCT1000N170_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

SCT1000N170 electronic component of STMicroelectronics

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See Product Specifications

Part No.	SCT1000N170
Manufacturer:	STMicroelectronics
Category:	SiC MOSFETs
Description:	SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ 7 A
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

8: USD 15.7896 ea
Line Total: USD 126.32

Availability - 0

MOQ: 8 Multiples: 1
Pack Size: 1

SCT1000N170 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 21 Jan to Fri. 24 Jan MOQ : 8 Multiples : 1	8 : USD 15.7896

We are delighted to provide the SCT1000N170 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SCT1000N170 and other electronic components in the SiC MOSFETs category and beyond.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category SiC MOSFETs SiC MOSFETs
Mounting Style Through Hole Through Hole
Transistor Polarity N - Channel N - Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 1.7 kV 1.7 kV
Id - Continuous Drain Current 6 A 6 A
Rds On - Drain-Source Resistance 1 Ohms 1 Ohms
Vgs - Gate-Source Voltage - 10 V , + 25 V - 10 V , + 25 V
Vgs th - Gate-Source Threshold Voltage 2.1 V 2.1 V
Qg - Gate Charge 14 nC 14 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 200 C + 200 C
Pd - Power Dissipation 120 W 120 W
Channel Mode Enhancement Enhancement
Package / Case HIP - 247 - 3 HIP - 247 - 3