X-On Electronics has gained recognition as a prominent supplier of SMAJ170A-TR ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMAJ170A-TR ESD Suppressors / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMAJ170A-TR STMicroelectronics

SMAJ170A-TR electronic component of STMicroelectronics
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Part No.SMAJ170A-TR
Manufacturer: STMicroelectronics
Category: ESD Suppressors / TVS Diodes
Description: STMicroelectronics TVS Diodes - Transient Voltage Suppressors 400W 170V Unidirect
Datasheet: SMAJ170A-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.1102 ea
Line Total: USD 551 
Availability - 87300
Ship by Mon. 25 Nov to Fri. 29 Nov
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
87300
Ship by Mon. 25 Nov to Fri. 29 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.1102
10000 : USD 0.1094
15000 : USD 0.1081
25000 : USD 0.1071
35000 : USD 0.1037

   
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RoHS - XON
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Cnhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SMAJ170A-TR from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMAJ170A-TR and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMAJ Transil Features Peak pulse power: 400 W (10/1000 s) A 2.3 kW (8/20 s) Stand off voltage range: from 5 V to 188 V K Unidirectional and bidirectional types Unidirectional Bidirectional Low leakage current: SMA 0.2 A at 25 C (JEDEC DO-214AC) 1 A at 85 C Operating T : 150 C j max High power capability at T : j max 270 W (10/1000 s) Description JEDEC registered package outline The SMAJ Transil series has been designed to Complies with the following standards protect sensitive equipment against electrostatic IEC 61000-4-2 level 4 discharges according to IEC 61000-4-2, and MIL STD 883, method 3015, and electrical over 15 kV (air discharge) stress according to IEC 61000-4-4 and 5. These 8 kV (contact discharge) devices are generally used against surges below IEC 61000-4-5 (see Table 3 for surge level) 400 W (10/1000 s). MIL STD 883G, method 3015-7 Class 3B Planar technology makes these devices suitable 25 kV HBM (human body model) for high-end equipment and SMPS where low Resin meets UL 94, V0 leakage current and high junction temperature are required to provide reliability and stability over MIL-STD-750, method 2026 solderability time. EIA STD RS-481 and IEC 60286-3 packing SMAJ are packaged in SMA (SMA footprint in IPC 7531 footprint accordance with IPC 7531 standard). TM: Transil is a trademark of STMicroelectronics July 2010 Doc ID 5544 Rev 12 1/10 www.st.com 10Characteristics SMAJ 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T initial = T 400 W PP j amb T Storage temperature range -65 to +150 C stg T Operating junction temperature range -55 to +150 C j T Maximum lead temperature for soldering during 10 s. 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistances Symbol Parameter Value Unit R Junction to leads 30 C/W th(j-l) R Junction to ambient on printed circuit on recommended pad layout 120 C/W th(j-a) Figure 1. Electrical characteristics - definitions II II Symbol Parameter II II FF PPPP Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL II RR VV VV VV VV FF VV CLCL BRBR RMRM VV VV VV VV I Leakage current V CLCL BRBR RMRM II RM RM RMRM II I Peak pulse current RMRM II PP RMRM VV VV VV RMRM BRBR CLCL II II RR RR T Voltage temperature coefficient V Forward voltage drop F Bidirectional R Dynamic resistance D II PPPP II PPPP Figure 2. Pulse definition for electrical characteristics Repetitive pulse current t = rise time (s) r t = pulse duration time (s) p t t p r 2/10 Doc ID 5544 Rev 12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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SG3
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