SMM4F12AVCL STMicroelectronics

SMM4F12AVCL 400 W low clamping voltage Transil Features Typical peak pulse power: 400 W (10/1000 s) 2.4 kW (8/20 s) Stand off voltage: 12 V A Unidirectional type Low clamping factor K Low leakage current: STmite flat 0.2 A at 25 C (DO222-AA) 1 A at 85 C Operating T max: 175 C j High power capability at 85 C: 385 W JEDEC registered package outline RoHS package Halogen free molding compound Description Complies with the following standards The SMM4F12AVCL Transil series has been designed to protect sensitive equipment against IEC 61000-4-2 level 4: electro-static discharges according to IEC 61000- 15 kV (air discharge) 4-2, MIL STD 883 Method 3015, and electrical 8 kV (contact discharge) over stress such as IEC 61000-4-4 and 5. They MIL STD 883G-Method 3015-7: class3 are generally for surges below 400 W 10/1000 s. 25 kV (human body model) This planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. Their low clamping voltages provide a better safety margin to protect sensitive circuits with extended life time expectancy such as HDD power combo voltage regulators. Packaged in STmite flat, this minimizes PCB space consumption (footprint in accordance with IPC 7531 standard). TM: Transil is a trademark of STMicroelectronics September 2011 Doc ID 022220 Rev 1 1/7 www.st.com 7Characteristics SMM4F12AVCL 1 Characteristics Table 1. Absolute ratings (T = 25 C) amb Symbol Parameter Value Unit V Peak pulse voltage (IEC 61000-4-2 contact discharge) 30 kV PP (1) P Peak pulse power dissipation T initial = T 400 W PP j amb P Power dissipation on infinite heatsink T = 125 C 2.5 W amb T Storage temperature range -65 to +175 C stg T Operating junction temperature range -55 to +175 C j T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistances Symbol Parameter Value Unit R Junction to leads 20 th(j-l) C/W R Junction to ambient on PCB with recommended pad layout 250 th(j-a) Figure 1. Electrical characteristics - parameter definitions II Symbol Parameter II FF Unidirectional V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL VV VV VV VV FF VV CLCL BRBR RMRM I Leakage current V RM RM II I Peak pulse current RMRM PP II RR aT Voltage temperature coefficient V Forward voltage drop F R Dynamic resistance D II PPPP Figure 2. Definition of I pulse PP %I 100 Pulse waveform x/y s 50 0 t y s t = x s p 2/7 Doc ID 022220 Rev 1