STBR3012WY STMicroelectronics

STBR3012-Y Datasheet Automotive high voltage rectifier for bridge applications Features A1 K AEC-Q101 qualified K Ultra low conduction losses Ultra-low reverse losses A High junction temperature capability (+175 C) A A NC V guaranteed from -40 to +175 C RRM K DPAK HV DPAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top DO-247 coating) PPAP capable ECOPACK 2 compliant (DO-247) Applications On board charger Bridge Description The high quality design of this diode has produced a device with consistently reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Product status link Thanks to its ultra-low conduction losses, the STBR3012-Y is especially suitable for STBR3012-Y use as input bridge diode in battery chargers. Product summary Symbol Value I 30 A F(AV) V 1200 V RRM T +175 C j V (typ.) 0.95 V F DS11897 - Rev 2 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STBR3012-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Non-repetitive surge reverse voltage 1600 V RSM V T = -40 C to +175 C Repetitive peak reverse voltage 1200 V RRM j I Forward rms current 45 A F(RMS) I Average forward current T = 155 C, = 0.5 square wave 30 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 300 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature -40 to +175 C j Table 2. Thermal parameters Symbol Parameter Typ. value Unit R Junction to case 0.45 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 2 j I V = V Reverse leakage current A R R RRM T = 150 C - 10 100 j T = 25 C - 1.05 1.3 j V I = 30 A Forward voltage drop V F F T = 150 C - 0.95 1.2 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.96 x I + 0.008 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode DS11897 - Rev 2 page 2/12