STF33N60M6 STMicroelectronics

STF33N60M6 Datasheet N-channel 600 V, 105 m typ., 25 A, MDmesh M6 Power MOSFET in a TO-220FP package Features Order code V R max. I DS DS(on) D STF33N60M6 600 V 125 m 25 A Reduced switching losses Lower R per area vs previous generation 3 DS(on) 2 1 Low gate input resistance 100% avalanche tested TO-220FP Zener-protected D(2) Applications Switching applications G(1) LLC converters Boost PFC converters Description S(3) AM15572v1 no tab The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly Product status link experience for maximum end-application efficiency. STF33N60M6 Product summary Order code STF33N60M6 Marking 33N60M6 Package TO-220FP Packing Tube DS12636 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STF33N60M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 25 case (1) I A D Drain current (continuous) at T = 100 C 15.8 case (2) I Drain current (pulsed) 78 A DM P Total dissipation at T = 25 C 35 W TOT case (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) dv/dt MOSFET dv/dt ruggedness 50 Insulation withstand voltage (RMS) from all three leads to external heat V 2.5 kV ISO sink (t = 1 s T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 25 A, di/dt 400 A/s V < V , V = 400. SD DS(peak) (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 3.6 C/W thj-case R Thermal resistance junction-ambient 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or non-repetitive I 4 A AR (pulse width limited by T ) Jmax Single pulse avalanche energy E 500 mJ AS (starting Tj = 25 C, I = I , V = 50 V) D AR DD DS12636 - Rev 2 page 2/13