TS420 Sensitive gate 4 A SCRs Datasheet - production data Description Thanks to highly sensitive triggering levels, the device is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies among others. Available in through-hole and surface-mount packages, they provide an optimized performance in a limited space area. Table 1: Device summary Order code Sensitivity Package TS420-600B DPAK Features TS420-600H 0.2 mA IPAK On-state RMS current: 4 A TS420-600T TO-220AB Repetitive peak off-state voltage (V , DRM VRRM) 600 V Triggering gate current, IGT 0.2 mA October 2017 DocID5203 Rev 6 1/14 www.st.com This is information on a product in full production. Characteristics TS420 1 Characteristics Table 2: Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 conduction angle) TC = 115C 4 A I Average on-state current (180 conduction angle) T = 115C 2.5 A T(AV) C tp = 8.3 ms 33 Non repetitive surge peak on-state I T = 25 C A TSM j initial current t = 10 ms 30 p 2 2 2 I t I t value for fusing tp = 10 ms Tj = 25 C 4.5 A s Critical rate of rise of on-state current dl/dt f = 60 Hz T = 125 C 50 A/s j I = 10 mA, dl / dt = 0.1 A/s G G IGM Peak gate current tp = 20 s 1.2 A P Average gate power dissipation 0.2 W G(AV) VRGM Maximum peak reverse gate voltage 5 V T Storage junction temperature range -40 to +150 C stg Tj Maximum operating junction temperature -40 to +125 C Table 3: Device timings Symbol Parameter Test conditions Value Unit ITM = 10 A, Tj = 25 C, VD = VDRM(max.), t Gate controlled turn on time 0.5 (typ.) GT IGT = 10 mA, dIG/dt = 0.2 A/s, RG = 1 k s I = 8 A, TM T = 125 C, j V = 67% V (max.), D DRM t Circuit controlled turn off time V = 10 V, 60 (typ.) Q R dI /dt = 10 A/s, T dV /dt = 2 V/s, D R = 1 k G 2/14 DocID5203 Rev 6