TSU101RILT STMicroelectronics

TSU101, TSU102, TSU104 Nanopower, rail-to-rail input and output, 5 V CMOS operational amplifiers Datasheet - production data Benefits 42 years of typical equivalent lifetime (for TSU101) if supplied by a 220 mAh coin type Lithium battery Tolerance to power supply transient drops Accurate signal conditioning of high impedance sensors Application performances guaranteed over industrial temperature range Fast desaturation Applications Ultra long life battery-powered applications Power metering UV and photo sensors Electrochemical and gas sensors Pyroelectric passive infrared (PIR) detection Battery current sensing Medical instrumentation RFID readers Features Submicro ampere current consumption: Description 580 nA typ per channel at 25 C at V = 1.8 V The TSU101, TSU102, and TSU104 operational CC Low supply voltage: 1.5 V - 5.5 V amplifiers offer an ultra low-power consumption of 580 nA typical and 750 nA maximum per Unity gain stable channel when supplied by 1.8 V. Combined with Rail-to-rail input and output a supply voltage range of 1.5 V to 5.5 V, these Gain bandwidth product: 8 kHz typ features allow the TSU10x series to be efficiently Low input bias current: 5 pA max at 25 C supplied by a coin type Lithium battery or a High tolerance to ESD: 2 kV HBM regulated voltage in low-power applications. Industrial temperature range: -40 C to 85 C The 8 kHz gain bandwidth of these devices make them ideal for sensor signal conditioning, battery supplied, and portable applications. September 2015 DocID024317 Rev 3 1/33 www.st.com This is information on a product in full production. Contents TSU101, TSU102, TSU104 Contents 1 Package pin connections ................................................................ 3 2 Absolute maximum ratings and operating conditions ................. 4 3 Electrical characteristics ................................................................ 5 4 Application information ................................................................ 17 4.1 Operating voltages .......................................................................... 17 4.2 Rail-to-rail input ............................................................................... 17 4.3 Input offset voltage drift over temperature ....................................... 17 4.4 Long term input offset voltage drift .................................................. 18 4.5 Schematic optimization aiming for nanopower ................................ 19 4.6 PCB layout considerations .............................................................. 20 4.7 Using the TSU10x series with sensors ............................................ 20 4.8 Fast desaturation ............................................................................ 22 4.9 Using the TSU10x series in comparator mode ................................ 22 4.10 ESD structure of TSU10x series ..................................................... 22 5 Package information ..................................................................... 23 5.1 SC70-5 (or SOT323-5) package information ................................... 24 5.2 SOT23-5 package information ........................................................ 25 5.3 DFN8 2x2 package information ....................................................... 26 5.4 MiniSO8 package information ......................................................... 27 5.5 QFN16 3x3 package information ..................................................... 28 5.6 TSSOP14 package information ....................................................... 30 6 Ordering information ..................................................................... 31 7 Revision history ............................................................................ 32 2/33 DocID024317 Rev 3