USB6B1 Data line protection Applications Where transient overvoltage protection in sensitive equipment is required, such as: Universal Serial Bus ports RS-423 interfaces RS-485 interfaces SO-8 ISDN equipment T1/E1 line cards HDSL / ASDL interfaces Order Codes Part Numbers Marking Features USB6B1 USB62 Full diode bridge with integrated clamping USB6B1RL USB62 protection Breakdown voltage: V = 6 V min. BR Functional diagram Peak pulse power dissipation: P = 500 W PP (8/20 s) Very low capacitance, compatible with high debit data or signal rates. V V CC CC Description I/O1 I/O1 In order to prevent fast transients from leading to I/O2 I/O2 severe damages in a high speed data system, a GND GND specific protection has been developed by STMicroelectronics. The USB6B1 protects the two input lines against overvoltage. Besides, this device also keeps the power rails in a safe limit thanks to the integrated Transil diode. Complies with the following standards: MIL STD 883C - Method 3015-6 Benefits class 3 C = 100 pF R = 1500 Provides protection for each line and between 3 positive strikes and 3 negative strikes (F = 1 Hz) the supply voltage and GND: 25 A, 8/20 s. High ESD protection level: up to level 3 per MIL IEC 61000-4-2 level 4 STD 883C-Method 3015-6 15 kV (air discharge) Separated inputs and outputs (so-called 4-point 8 kV (contact discharge) structure) to improve ESD susceptibility. Comprehensive package pin-out for immediate implementation. August 2006 Rev 10 1/9 www.st.com 9Characteristics USB6B1 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit IEC61000-4-2 contact discharge 8 V Peak pulse voltage IEC61000-4-2 air discharge 15 kV PP MIL STD883C-Method 30 15-6 4 P Peak pulse power 8/20 s 500 W PP 8/20 s 25 I Peak pulse current A PP 2/10 s 40 T Storage temperature range - 55 to + 150 C stg T Operating temperature range - 40 to + 85 C op T Lead solder temperature (10 s duration) 260 C L Table 2. Electrical characteristics (T = 25 C) amb Value Symbol Parameter Unit Min Typ Max V Breakdown voltage between V and GND I = 1 mA 6 V BR BUS R I Leakage current V = 5.25 V 10 A RM RM Capacitance between pins D+ and D- V CC 15 pF V = 30 mV, F = 1 MHz, V = 0 V not connected OSC R C Capacitance between pins D+(or D-) and GND V = 5 V 25 pF CC V = 30 mV, F = 1 MHz, V = 5 V OSC R 2/9