VN5E160S-E STMicroelectronics

VN5E160S-E Single channel high side driver for automotive applications Features Max transient supply voltage V 41V CC Operating voltage range V 4.5 to 28V CC Max On-state resistance (per ch.) R 160 m ON Current limitation (typ) I 10A LIMH SO-8 (1) Off state supply current I 2 A S 1. Typical value with all loads connected. Application General Inrush current active management by All types of resistive, inductive and capacitive power limitation loads Very low stand-by current Description 3.0V CMOS compatible inputs Optimized electromagnetic emissions The VN5E160S-E is a single channel high-side Very low electromagnetic susceptibility driver manufactured in the ST proprietary VIPower M0-5 technology and housed in the tiny In compliance with the 2002/95/EC SO-8 package. european directive Diagnostic functions The VN5E160S-E is designed to drive automotive grounded loads delivering protection, diagnostics Open Drain status output and easy 3V and 5V CMOS-compatible interface On-state open load detection with any microcontroller. Off-state open load detection The device integrates advanced protective Output short to V detection CC functions such as load current limitation, inrush Overload and short to ground (power and overload active management by power limitation) indication limitation, over-temperature shut-off with auto- Thermal shut-down indication restart and over-voltage active clamp. Protections A dedicated active low digital status pin is Undervoltage shut-down associated with every output channel in order to Overvoltage clamp provide Enhanced diagnostic functions including Load current limitation fast detection of overload and short-circuit to Self limiting of fast thermal transients ground, over-temperature indication, short-circuit to V diagnosis and ON & OFF state open-load Protection against loss of ground and loss CC detection. of V CC Over-temperature shut-down with The diagnostic feedback of the whole device can autorestart (thermal shut-down) be disabled by pulling the STAT DIS pin up, thus (a) allowing wired-ORing with other similar devices. Reverse battery protected Electrostatic discharge protection a. See Figure 32: Application schematic. September 2013 Rev 3 1/34 www.st.com 34Contents VN5E160S-E Contents 1 Block diagram and pin configuration . 5 2 Electrical specifications 7 2.1 Absolute maximum ratings . 7 2.2 Electrical characteristics . 9 2.3 Waveforms 15 2.4 Electrical characteristics curves 19 3 Application information . 22 3.1 GND protection network against reverse battery . 22 3.1.1 Solution 1: resistor in the ground line (RGND only) 22 3.1.2 Solution 2: diode (DGND) in the ground line . 23 3.2 Load dump protection 23 3.3 MCU I/Os protection . 23 3.4 Open load detection in Off state 24 3.5 Maximum demagnetization energy (VCC = 13.5V) . 25 4 Package and PCB thermal data . 26 4.1 SO-8 thermal data 26 5 Package and packing information . 29 5.1 ECOPACK packages . 29 5.2 Package mechanical data 29 5.3 Packing information . 31 6 Order codes . 32 7 Revision history . 33 2/34