VN808-32-E STMicroelectronics

VN808-E/VN808-32-E Datasheet Octal channel high-side driver Features V /2 compatible input CC Junction overtemperature protection Case overtemperature protection for thermal independence of the channels Current limitation Short-circuit load protection Undervoltage shutdown Protection against loss of ground Very low standby current Compliance to 61000-4-4 IEC test up to 4 kV Description The VN808-E and VN808-32-E are monolithic devices, realized in STMicroelectronics VIPower M0-3 technology, intended to drive any kind of load with one side connected to ground. Active current limitation combined with thermal shutdown and automatic restart, protect the device against overload. In overload conditions, the channel turns OFF and ON again automatically in order to maintain the junction temperature between T and T . If this condition causes case JSD R temperature reach T ,overloaded channels are turned OFF and restart only when CSD case temperature decreases down toT . Non-overloaded channels continue to CR operate normally. The device automatically turns OFF in case of ground pin disconnection. This device is especially suitable for industrial applications conform to Product status link IEC 61131. VN808-E Figure 1. Internal schematic VN808-32-E UVLO VCC Product label IN1 OUT1 IN2 OUT2 GATE DRIVERS IN8 OUT8 (1) I V Type R DS(on) OUT CC VN808-E 150 m 0.7 A 45 V LOAD CURRENT LIMITATION (x8) STATUS GND VN808-32-E 150 m 1 A 45 V THERMAL JUNCTION (x8) 1. Per channel THERMAL CASE DS4333 - Rev 13 - June 2020 www.st.com For further information contact your local STMicroelectronics sales office. CONTROL LOGIC STAGEVN808-E/VN808-32-E Maximum ratings 1 Maximum ratings Table 1. Absolute maximum ratings Symbol Parameter Max. Unit V DC Supply Voltage 45 V CC DC Ground Reverse Current 250 mA -I GND TRAN ground reverse current (pulse duration < 1 ms) 6 A I DC Output Current Internally limited A OUT -I Reverse DC Output Current 2 A OUT I DC Input Current 10 mA IN V -3/+V Input Voltage Range V IN CC V Electrostatic discharge (R = 1.5K C = 100pF) 2000 V ESD P Power dissipation at Tc = 25C 96 W TOT Single pulse Avalanche Energy per channel, all channels driven EAS 1.15 J simultaneously (Tamb= 125 C, I = 0.6 A per channel) OUT T Junction Operating Temperature Internally limited C J T Case Operating Temperature Internally limited C c T Storage Temperature -40 to 150 C STG Table 2. Thermal data Symbol Parameter Max. Value Unit R Thermal Resistance, Junction-to-case 1.3 th(JC) C/W (1) R 50 th(JA) Thermal Resistance, Junction-to-ambient 1. When mounted on FR4 printed circuit board with 0.5 cm of copper area (at least 35 m think) connected to all TAB pins. DS4333 - Rev 13 page 2/26