Product Information

VNP10N06-E

VNP10N06-E electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 60V 10A OmniFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.53 ea
Line Total: USD 2.53

1 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

VNP10N06-E
STMicroelectronics

1 : USD 2.3729
10 : USD 2.0586
50 : USD 1.8633
100 : USD 1.6619
500 : USD 1.5732
1000 : USD 1.5329

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qualification
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Brand Category
LoadingGif

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Additional Infomation About Product

VNP10N06OMNIFE: FULLY AUTOPROTECTED POWER MOSFET TYPE V R I clamp DS(on) lim VNP10N06 60 V 0.3 10 A LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN LOGIC LEVEL INPUT THRESHOLD 3 2 ESD PROTECTION 1 SCHMITT TRIGGER ON INPUT HIGH NOISE IMMUNITY TO-220 STANDARD TO-220 PACKAGE DESCRIPTION The VNP10N06 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear current limi- tation and overvoltage clamp protect the chip n harsh enviroments. BLOCK DIAGRAM 1/11 September 2013VNP10N06 ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit VDS Drain-source Voltage (Vin = 0) Internally Clamped V V Input Voltage Internally Clamped V in Iin Input Current 20 mA I Drain Current Internally Limited A D IR Reverse DC Output Current -15 A V 4000 V esd Electrostatic Discharge (C= 100 pF, R=1.5 K) o P Total Dissipation at T = 25 C42 W tot c o T Operating Junction Temperature Internally Limited C j o T Case Operating Temperature Internally Limited C c o T Storage Temperature -55 to 150 C stg THERMAL DATA o R Thermal Resistance Junction-case Max 3 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source Clamp I = 200 mA V = 0 506070 V CLAMP D in Voltage V Input Low Level 1.5 V IL I = 100 A V = 16 V D DS Voltage V Input High Level R = 27 V = 16 V 3.2 V IH L DD Voltage V = 0.5 V DS VINCL Input-Source Reverse Iin = -1 mA -1 -0.3 V Clamp Voltage I = 1 mA 8 11 V in I Zero Input Voltage V = 50 V V = V 250 A DSS DS in IL Drain Current (Vin = 0) VDS < 35 V Vin = VIL 100 A I Supply Current from V = 0 V V = 5 V 150 300 A ISS DS in Input Pin ON (* ) Symbol Parameter Test Conditions Min. Typ. Max. Unit o R Static Drain-source On V = 7 V I = 1 A T < 125 C 0.15 0.3 DS(on) in D J Resistance DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit C Output Capacitance V = 13 V f = 1 MHz V = 0 350 500 pF oss DS in 2/11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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