X-On Electronics has gained recognition as a prominent supplier of 1N4148TR Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1N4148TR Diodes - General Purpose, Power, Switching are a product manufactured by Synsemi. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1N4148TR Synsemi

1N4148TR electronic component of Synsemi
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See Product Specifications
Part No.1N4148TR
Manufacturer: Synsemi
Category: Diodes - General Purpose, Power, Switching
Description: Switching Diode - DO-35 - 0.15A.
Datasheet: 1N4148TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
320: USD 0.2515 ea
Line Total: USD 80.48 
Availability - 383129
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 320  Multiples: 1
Pack Size: 1
Availability Price Quantity
383129
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 320
Multiples : 1
320 : USD 0.2515
1000 : USD 0.1487
2500 : USD 0.0762
5000 : USD 0.0284
10000 : USD 0.0211
40000 : USD 0.0176
50000 : USD 0.0149

383033
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 320
Multiples : 320
320 : USD 0.4187
1280 : USD 0.2389
2560 : USD 0.1204
5120 : USD 0.0441
10240 : USD 0.0322

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
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We are delighted to provide the 1N4148TR from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4148TR and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1N4148 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diode Electrically equivalent diodes: 1N4148 - 1N914 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Extreme fast switches MECHANICAL DATA Case: DO-35 Weight: approx. 105 mg Cathode band color: black Packaging codes/options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N4148 1N4148-TAP or 1N4148TR V4148 Single diode Tape and reel/ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 100 V RRM Reverse voltage V 75 V R Peak forward surge current t = 1 s I 2A p FSM Repetitive peak forward current I 500 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) l = 4 mm, T = 45 C P 440 mW L tot Power dissipation l = 4 mm, T 25 C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 C j Storage temperature range T - 65 to + 150 C stg Rev. 1.3, 04-Dec-13 Document Number: 81857 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?910001N4148 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 10 mA V 1V F F V = 20 V I 25 nA R R Reverse current V = 20 V, T = 150 C I 50 A R j R V = 75 V I 5A R R I = 100 A, t /T = 0.01, R p Breakdown voltage V 100 V (BR) t = 0.3 ms p V = 0 V, f = 1 MHz, R Diode capacitance C 4pF D V = 50 mV HF Rectification effiency V = 2 V, f = 100 MHz 45 % HF r I = I = 10 mA, F R t 8ns rr i = 1 mA R Reverse recovery time I = 10 mA, V = 6 V, F R t 4ns rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.2 1.0 I = 100 mA F T = 25 C j 0.8 100 10 mA 0.6 1m A Scattering Limit 10 0.4 0.1 mA 0.2 1 0 - 30 0 30 60 90 120 1 100 10 94 9098 V - Reverse Voltage (V) 94 9169 T - Junction Temperature (C) j R Fig. 1 - Forward Voltage vs. Junction Temperature Fig. 3 - Reverse Current vs. Reverse Voltage 1000 1N4148 100 Scattering Limit 10 1 T = 25 C J 0.1 0 0.4 0.8 1.2 1.6 2.0 94 9170 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.3, 04-Dec-13 Document Number: 81857 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 I - Forward Current (mA) V - Forward Voltage (V) F F I - Reverse Current (nA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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