X-On Electronics has gained recognition as a prominent supplier of 1.5KE30A esd suppressors / tvs diodes across the USA, India, Europe, Australia, and various other global locations. 1.5KE30A esd suppressors / tvs diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for esd suppressors / tvs diodes, ensuring timely deliveries around the world.

1.5KE30A Taiwan Semiconductor

1.5KE30A electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.1.5KE30A
Manufacturer: Taiwan Semiconductor
Category:ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 30V 1.5KW 5% Uni
Datasheet: 1.5KE30A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0134 ea
Line Total: USD 2.01

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 17 Jun to Fri. 21 Jun

MOQ : 1
Multiples : 1
1 : USD 2.1744
10 : USD 1.739
100 : USD 1.3664
500 : USD 1.0579
1250 : USD 0.8958

   
Manufacturer
Product Category
Brand
Product Range
Tvs Polarity
Reverse Stand-Off Voltage Vrwm
Clamping Voltage Vc Max
Diode Case Style
No. Of Pins
Breakdown Voltage Min
Breakdown Voltage Max
Peak Pulse Power Dissipation
Svhc
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We are delighted to provide the 1.5KE30A from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1.5KE30A and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

1.5KE SERIES Taiwan Semiconductor CREAT BY ART 1500W, 6.8V - 440V Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 1500W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to V for unidirectional BR and 5.0ns for bidirectional - Typical I less than 1A above 10V R - UL recognized file E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 DO-201 MECHANICAL DATA Case: DO-201 Molding compound: UL flammability classification rating 94V-0 Part No. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Weight: 0.94g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Peak power dissipation at T =25C, Tp=1ms (Note 1) P 1500 W A PK Steady state power dissipation at T =75C L P 5 W D lead lengths .375 , 9.5mm (Note 2) Peak forward surge current, 8.3 ms single half sine-wave I 200 A FSM superimposed on rated load Maximum Instantaneous Forward Voltage at 50 A for V 3.5 / 5.0 V F Unidirectional Only (Note 3) Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Non-repetitive current pulse per fig. 3 and derated above T =25C per fig. 2 A Note 2: Mounted on copper pad area of 0.6 x 0.6 (16mm x 16mm) Note 3: V =3.5V for devices of V 200V and V =5.0V max. for devices V >200V F BR F BR Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types 1.5KE6.8 - types 1.5KE440 2. Electrical characteristics apply in both directions ORDERING INFORMATION PART NO. PACKING CODE PACKING CODE PACKAGE PACKING PART NO. SUFFIX SUFFIX A0 DO-201 500 / Ammo box 1.5KExxxx H R0 G DO-201 1,250 / 13 Paper reel (Note 1) B0 DO-201 500 / Bulk packing Note 1:xxx defines voltage from 6.8V (1.5KE6.8) to 440V (1.5KE440) EXAMPLE EXAMPLE PART NO. PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified 1.5KE100AHR0G 1.5KE100A H R0 G Green compound Version: N16021.5KE SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 Non-repetitive pulse waveform With heat sink shown in fig.3 100 10 75 50 1 Without heat sink 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 tp, PULSE WIDTH, (s) T , AMBIENT TEMPERATURE ( C) A FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY Pulse width(td) is defined 200 140 as the point where the peak tr=10s 180 current decays to 50% of I PPM 8.3ms single half sine wave 120 Peak value 160 I PPM 100 140 Half value-I /2 PPM 120 80 10/1000s, waveform as defined by R.E.A. 100 60 80 40 60 40 20 20 td 0 0 0 0.511.522.533.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 10000 UNIDIRECTIONAL BIDIRECTIONA VR=0 1000 100 V -rated R stand-off f=1.0MHz voltage Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Version: N1602 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, kW CJ, JUNCTION CAPACITANCE (pF) A PPM PEAK PULSE POWER(P ) OR CURRENT (I ) A IFSM, PEAK FORWARD SURGE CURRENT (A) PP PP DERATING IN PERCENTAGE (%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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