BYG23M Taiwan Semiconductor CREAT BY ART High Efficient Surface Mount Rectifiers FEATURES - Glass passivated junction chip. - Ideal for automated placement - Fast switching for high efficiency - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 available TYPICAL APPLICATION DO-214AC (SMA) The superior avalanche capability of BYG23M is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.064 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL BYG23M UNIT Maximum repetitive peak reverse voltage V 1000 V RRM Maximum RMS voltage V 700 V RMS Maximum DC blocking voltage V 1000 V DC Maximum average forward rectified current ( T =65C) I 1.5 A A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.7 V F 1 A 1 Maximum reverse current rated VR T =25C J I T =100C 15 A R J T =125C J 50 Pulse energy in avalanche mode, non repetitive E 30 mJ RSM (Inductive load switch off ) T =25, I =1.23A A (BR)R Maximum reverse recovery time (Note 2) t 65 ns rr Typical junction capacitance (Note 3) C 15 pF J O Typical thermal resistance R 70 JA C/W O Operating junction temperature range T - 55 to +150 C J O Storage temperature range T - 55 to +150 STG C Note 1: Pulse Test with PW=300s, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0Volts. Document Number: DS D1411087 Version: B14BYG23M Taiwan Semiconductor ORDERING INFORMATION PACKING CODE PACKAGE PACKING CODE PACKING PART NO. SUFFIX (Note 1) R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel F3 Folded SMA 1,800 / 7 Plastic reel BYG23M G F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel E3 Clip SMA 1,800 / 7 Plastic reel E2 Clip SMA 7,500 / 13 Plastic reel Note 1: PackageSM andFolded SM are AEC-Q101 qualified, Clip SMA doesn t. EXAMPLE PREFERRED PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX BYG23M R3 R3 AEC-Q101 qualified BYG23M AEC-Q101 qualified BYG23M R3G BYG23M R3 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 MAXIMUM AVERAGE FORWARD CURRENT FIG. 2 TYPICAL REVERSE CHARACTERISTICS DERATING 100 2 1.5 10 T =125C J 1 1 0.5 T =25C J 0 0 25 50 75 100 12 5 150 0. 1 0 2040 6080 100 o AMBIENT TEMPERATURE ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD FIG. 4 TYPICAL JUNCTION CAPACITANCE SURGE CURRENT 70 50 f=1.0MHz 60 Vslg=50mVp-p 8.3ms Single Half Sine Wave 40 50 30 40 30 20 20 10 10 0 0 1 10 100 0. 1 1 10 100 NUMBER OF CYCLES AT 60 Hz REVERSE VOLTAGE (V) Document Number: DS D1411087 Version: B14 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE URRENT (A) JUNCTION CAPACITANCE (pF) INSTANTANEOUS REVERSE CURRENT(A)