X-On Electronics has gained recognition as a prominent supplier of BZT55B4V7 L1G Zener Diodes across the USA, India, Europe, Australia, and various other global locations. BZT55B4V7 L1G Zener Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

BZT55B4V7 L1G Taiwan Semiconductor

BZT55B4V7 L1G electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.BZT55B4V7 L1G
Manufacturer: Taiwan Semiconductor
Category: Zener Diodes
Description: Zener Diodes MMELF, 500mW, 2%, Small Signal Zener Diode
Datasheet: BZT55B4V7 L1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2975 ea
Line Total: USD 0.3

Availability - 9401
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9401
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 0.1973
10 : USD 0.136
100 : USD 0.0669
1000 : USD 0.039
2500 : USD 0.0345
10000 : USD 0.0268
25000 : USD 0.0245
50000 : USD 0.0234
100000 : USD 0.0223

   
Manufacturer
Product Category
Vz - Zener Voltage
Voltage Tolerance
Pd - Power Dissipation
Zz - Zener Impedance
Maximum Operating Temperature
Configuration
Mounting Style
Packaging
Minimum Operating Temperature
Test Current
Series
Ir - Maximum Reverse Leakage Current
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BZT55B4V7 L1G from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BZT55B4V7 L1G and other electronic components in the Zener Diodes category and beyond.

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BZT55B2V4 - BZT55B75 Taiwan Semiconductor 500mW 2% Zener Diodes FEATURES KEY PARAMETERS Wide zener voltage range selection: 2.4V to 75V PARAMETER VALUE UNIT VZ Tolerance Selection of 2% V 2.4-75 V Z Surface device type mountin Test current I 5 mA ZT Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC P 500 mW tot Halogen-free according to IEC 61249-2-21 V at I =10mA 1 V F F T Max. 175 C J APPLICATIONS Package LS34 Low voltage stabilzers or voltage references Configuration Single dice Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: Mini-MELF (Glass Seal) Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 29 2.5mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PART NUMBER UNIT Forward voltage I =10mA V 1 V F F Total power dissipation P 500 mW tot Junction temperature range T -65 to +175 C J Storage temperature range T -65 to +175 C STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient thermal resistance R 500 C/W JA 1 Version:H1610 BZT55B2V4 - BZT55B75 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A TEST REGULAR TEST ZENER VOLTAGE LEAKAGE CURRENT CURRENT IMPEDANCE CURRENT PART V I I Z I Z I I I V Z ZT ZT ZT ZT ZK ZK ZK R R NUMBER V mA mA A V Min. Nom. Max. Max. Max. Max. BZT55B2V4 2.35 2.4 2.45 5 85 600 1.0 50 1 BZT55B2V7 2.65 2.7 2.75 5 85 600 1.0 10 1 BZT55B3V0 2.94 3.0 3.06 5 85 600 1.0 4 1 BZT55B3V3 3.23 3.3 3.37 5 85 600 1.0 2 1 BZT55B3V6 3.53 3.6 3.67 5 85 600 1.0 2 1 BZT55B3V9 3.82 3.9 3.98 5 85 600 1.0 2 1 BZT55B4V3 4.21 4.3 4.39 5 75 600 1.0 1 1 BZT55B4V7 4.61 4.7 4.79 5 60 600 1.0 0.5 1 BZT55B5V1 5.00 5.1 5.20 5 35 550 1.0 0.1 1 BZT55B5V6 5..49 5.6 5.71 5 25 450 1.0 0.1 1 BZT55B6V2 6.08 6.2 6.32 5 10 200 1.0 0.1 2 BZT55B6V8 6.66 6.8 6.94 5 8 150 1.0 0.1 3 BZT55B7V5 7.35 7.5 7.65 5 7 50 1.0 0.1 5 BZT55B8V2 8.04 8.2 8.36 5 7 50 1.0 0.1 6.2 BZT55B9V1 8.92 9.1 9.28 5 10 50 1.0 0.1 6.8 BZT55B10 9.80 10.0 10.20 5 15 70 1.0 0.1 7.5 BZT55B11 10.78 11.0 11.22 5 20 70 1.0 0.1 8.2 BZT55B12 11.76 12.0 12.24 5 20 90 1.0 0.1 9.1 BZT55B13 12.74 13.0 13.26 5 26 110 1.0 0.1 10 BZT55B15 14.70 15.0 15.30 5 30 110 1.0 0.1 11 BZT55B16 15.68 16.0 16.32 5 40 170 1.0 0.1 12 BZT55B18 17.64 18.0 18.36 5 50 170 1.0 0.1 13 BZT55B20 19.60 20.0 20.40 5 55 220 1.0 0.1 15 BZT55B22 21.56 22.0 22.44 5 55 220 1.0 0.1 16 BZT55B24 23.52 24.0 24.48 5 80 220 1.0 0.1 18 BZT55B27 26.46 27.0 27.54 5 80 220 1.0 0.1 20 BZT55B30 29.40 30.0 30.60 5 80 220 1.0 0.1 22 BZT55B33 32.34 33.0 33.66 5 80 220 1.0 0.1 24 BZT55B36 35.28 36.0 36.72 5 80 220 1.0 0.1 27 BZT55B39 38.22 39.0 39.78 2.5 90 500 0.5 0.1 28 BZT55B43 42.14 43.0 43.86 2.5 90 600 0.5 0.1 32 BZT55B47 46.06 47.0 47.94 2.5 110 700 0.5 0.1 35 BZT55B51 49.98 51.0 52.02 2.5 125 700 0.5 0.1 38 BZT55B56 54.88 56.0 57.12 2.5 135 1000 0.5 0.1 42 BZT55B62 60.76 62.0 63.24 2.5 150 1000 0.5 0.1 47 BZT55B68 66.64 68.0 69.36 2.5 160 1000 0.5 0.1 51 BZT55B75 73.50 75.0 76.50 2.5 170 1000 0.5 0.1 56 2 Version:H1610

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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