BZT55C3V6 Taiwan Semiconductor

BZT55B2V4 ~ BZT55B75 Taiwan Semiconductor Small Signal Product 500mW , 2% Tolerance SMD Zener Diode FEATURES - Wide zener voltage range selection: 2.4V to 75V - VZ Tolerance Selection of 2% - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - All external surfaces are corrosion resistant and leads are readily solderable QUADRO Mini-MELF (LS34) Hermetically Sealed Glass MECHANICAL DATA - Case: QUADRO Mini-MELF Package (JEDEC DO-213) o - High temperature soldering guaranteed: 270 C/10s - Polarity: Indicated by cathode band - Weight: 29 2.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Power Dissipation P 500 mW D I = 10 mA Forward Voltage V 1 V F F o Thermal Resistance (Junction to Ambient) (Note 1) R 500 JA C/W o Junction and Storage Temperature Range T , T - 65 to + 175 J STG C Note1: Valid provided that electrodes are kept at ambient temperature Zener I vs. V Characteristics : Voltage at I V ZK BR I : Test current for voltage V ZK BR Z : Dynamic impedance at I ZK ZK I : Test current for voltage V ZT Z V : Voltage at current I Z Z : Dynamic impedance at I ZT ZT I : Maximum steady state current ZM : Voltage at I V ZM ZM Version: G14 Document Number: DS S1405002BZT55B2V4 ~ BZT55B75 Taiwan Semiconductor Small Signal Product Electrical Characteristics o (Ratings at T =25 C ambient temperature unless otherwise specified) A V Forward Voltage = 1.0V Maximum I = 10 mA for all part numbers F F Z I Z I I V V I (Volt) ZT ZT ZK ZK R R Z ZT I I V ZT ZK R Part Number () () (A) (mA) (mA) (V) Min Nom Max Max Max Max BZT55B2V4 2.35 2.4 2.45 5 85 1 600 50 1 BZT55B2V7 2.65 2.7 2.75 5 85 1 600 10 1 BZT55B3V0 2.94 3.0 3.06 5 85 1 600 4 1 BZT55B3V3 3.23 3.3 3.37 5 85 1 600 2 1 BZT55B3V6 3.53 3.6 3.67 5 85 1 600 2 1 BZT55B3V9 3.82 3.9 3.98 5 85 1 600 2 1 BZT55B4V3 4.21 4.3 4.39 5 75 1 600 1 1 BZT55B4V7 4.61 4.7 4.79 5 60 1 600 0.5 1 BZT55B5V1 5.00 5.1 5.20 5 35 1 550 0.1 1 BZT55B5V6 5..49 5.6 5.71 5 25 1 450 0.1 1 BZT55B6V2 6.08 6.2 6.32 5 10 1 200 0.1 2 BZT55B6V8 6.66 6.8 6.94 5 8 1 150 0.1 3 BZT55B7V5 7.35 7.5 7.65 5 7 1 50 0.1 5 BZT55B8V2 8.04 8.2 8.36 5 7 1 50 0.1 6.2 BZT55B9V1 8.92 9.1 9.28 5 10 1 50 0.1 6.8 BZT55B10 9.80 10.0 10.20 5 15 1 70 0.1 7.5 BZT55B11 10.78 11.0 11.22 5 20 1 70 0.1 8.2 BZT55B12 11.76 12.0 12.24 5 20 1 90 0.1 9.1 BZT55B13 12.74 13.0 13.26 5 26 1 110 0.1 10 BZT55B15 14.70 15.0 15.30 5 30 1 110 0.1 11 BZT55B16 15.68 16.0 16.32 5 40 1 170 0.1 12 BZT55B18 17.64 18.0 18.36 5 50 1 170 0.1 13 BZT55B20 19.60 20.0 20.40 5 55 1 220 0.1 15 BZT55B22 21.56 22.0 22.44 5 55 1 220 0.1 16 BZT55B24 23.52 24.0 24.48 5 80 1 220 0.1 18 BZT55B27 26.46 27.0 27.54 5 80 1 220 0.1 20 BZT55B30 29.40 30.0 30.60 5 80 1 220 0.1 22 BZT55B33 32.34 33.0 33.66 5 80 1 220 0.1 24 BZT55B36 35.28 36.0 36.72 5 80 1 220 0.1 27 BZT55B39 38.22 39.0 39.78 2.5 90 0.5 500 0.1 28 BZT55B43 42.14 43.0 43.86 2.5 90 0.5 600 0.1 32 BZT55B47 46.06 47.0 47.94 2.5 110 0.5 700 0.1 35 BZT55B51 49.98 51.0 52.02 2.5 125 0.5 700 0.1 38 BZT55B56 54.88 56.0 57.12 2.5 135 0.5 1000 0.1 42 BZT55B62 60.76 62.0 63.24 2.5 150 0.5 1000 0.1 47 BZT55B68 66.64 68.0 69.36 2.5 160 0.5 1000 0.1 51 BZT55B75 73.50 75.0 76.50 2.5 170 0.5 1000 0.1 56 Notes 1. The Zener Voltage (V ) is tested under pulse condition of 10ms. Z 2. The device numbers listed have a standard tolerance on the nomial zener voltage of 2% 3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an RMS value equal to 10% of the dc zener current(I or I ) is superimposed to I or I . ZT ZK ZT ZK Version: G14 Document Number: DS S1405002