D2SB80 D2G Taiwan Semiconductor

D2SB05 D2SB80 Taiwan Semiconductor 2A, 50V - 800V Standard Bridge Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Ideal for printed circuit board I 2 A F High case dielectric strength V 50 - 800 V RRM High surge current capability UL Recognized File E-326243 I 80 A FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package GBL Configuration Quad APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application MECHANICAL DATA Case: GBL Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 2.00g (approximately) GBL ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A D2SB D2SB D2SB D2SB D2SB D2SB PARAMETER SYMBOL UNIT 05 10 20 40 60 80 Marking code on the device D2SB05 D2SB10 D2SB20 D2SB40 D2SB60 D2SB80 Repetitive peak reverse voltage V 50 100 200 400 600 800 V RRM Reverse voltage, total rms value V 35 70 140 280 420 560 V R(RMS) Forward current I 2 A F Surge peak forward current, 8.3ms single half sine-wave superimposed I 80 A FSM on rated load 2 2 Rating for fusing (t<8.3ms) I t 26 A s Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version: K2103 D2SB05 D2SB80 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 10 C/W JL Junction-to-ambient thermal resistance R 47 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) Forward voltage per diode I = 2A, T = 25C V - 1.1 V F J F T = 25C - 10 A J (2) Reverse current rated V per diode I R R T = 125C - 500 A J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING D2SBx GBL 25 / Tube D2SBxH GBL 25 / Tube Notes: 1. x defines voltage from 50V(D2SB05) to 800V(D2SB80) 2. H means AEC-Q101 qualified 2 Version: K2103