ES1AL R2 Taiwan Semiconductor

CREAT BY ART ES1AL - ES1JL 1.0AMP. Surface Mount Super Fast Rectifiers Sub SMA RoHRoHSS Pb COCOMMPPLILIANANCCEE Features For surface mounted application Low profile package Low power loss, high efficiency Ideal for automated placement Glass passivated chip junction High temperature soldering: 260 /10 seconds at terminals Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: Sub SMA plastic case Marking Diagram Terminal: Pure tin plated, lead free EXL = Specific Device Code Polarity: Color band cathode end G = Green Compound Packing: 8mm/12mm tape per EIA STD RS-481 Y = Year Weight: 0.0196 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% ES ES ES ES ES ES ES ES Symbol Unit Type Number 1AL 1BL 1CL 1DL 1FL 1GL 1HL 1JL Maximum Repetitive Peak Reverse Voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS Voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC Blocking Voltage V 50 100 150 200 300 400 500 600 V DC Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 0.95 1.3 1.7 V F 1 A Maximum Reverse Current Rated VR T =25 5 A I uA R T =125 100 A Maximum Reverse Recovery Time (Note 2) Trr 35 nS Typical Junction Capacitance (Note 3) Cj 10 8 pF R jA 85 O Typical Thermal Resistance C/W R 35 jL O Operating Temperature Range T - 55 to + 150 C J O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:F11RATINGS AND CHARACTERISTIC CURVES (ES1AL THRU ES1JL) FIG. 2 TYPICAL FORWARD CHARACTERISRICS FIG.1 FORWARD CURRENT DERATING CURVE 100 1.2 ES1HL-ES1JL 1 ES1FL-ES1GL 10 0.8 ES1AL-ES1DL 0.6 1 0.4 RESISTIVE OR INDUCTIVE LOAD 0.2 0.1 TA=25 0 Pulse Width=300us 80 90 100 110 120 130 140 150 1% Duty Cycle o LEAD TEMPERATURE ( C) 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 30 8.3mS Single Half Sine Wave 25 JEDEC Method 20 15 10 5 0 FIG. 5 TYPICAL REVERSE CHARACTERISTICS 1 10 100 1000 NUMBER OF CYCLES AT 60 Hz TA=125 100 FIG. 4 TYPICAL JUNCTION CAPACITANCE 10 14 TA=75 12 ES1AL-ES1DL 10 1 8 6 TA=25 ES1FL-ES1JL 0.1 4 TA=25 f=1.0MHz 2 Vsig=50mVp-p 0.01 0 0 20 40 60 80 100 120 140 1 10 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) REVERSE VOLTAGE (V) Version:F11 AVERAGE FORWARD A PEAK FORWARD SURGE A CAPACITANCE (pF) CURRENT (A) CURRENT (A) INSTANTANEOUS FORWARD A INSTANTANEOUS REVERSE A CURRENT (A) CURRENT (uA)