X-On Electronics has gained recognition as a prominent supplier of ES1C F2 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. ES1C F2 Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

ES1C F2 Taiwan Semiconductor

ES1C F2 electronic component of Taiwan Semiconductor
ES1C F2 Taiwan Semiconductor
ES1C F2 Diodes - General Purpose, Power, Switching
ES1C F2  Semiconductors

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See Product Specifications
Part No. ES1C F2
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diode Switching 150V 1A Automotive 2-Pin SMA T/R
Datasheet: ES1C F2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
7500: USD 0.0641 ea
Line Total: USD 480.75 
Availability - 0
MOQ: 7500  Multiples: 7500
Pack Size: 7500
Availability Price Quantity
0
Ship by Tue. 08 Apr to Mon. 14 Apr
MOQ : 7500
Multiples : 7500
7500 : USD 0.0641

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temperature Range
Rev Curr
Avg Forward Curr Max
Rev Recov Time
Rad Hardened
Pin Count
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ES1C F2 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ES1C F2 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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ES1A - ES1J 1.0AMP. Surface Mount Super Fast Rectifiers SMA/DO-214AC RoHRoHSS Pb COCOMMPPLILIANANCCEE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260 /10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Qualified as per AEC-Q101 Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Cases: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free ES1X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packing: 12mm tape per EIA STD RS-481 Y = Year Weight: 0.064 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% ES ES ES ES ES ES ES ES Type Number Symbol Units 1A 1B 1C 1D 1F 1G 1H 1J Maximum Recurrent Peak Reverse Voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS Voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC Blocking Voltage V 50 100 150 200 300 400 500 600 V DC Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 0.95 1.3 1.7 V F 1 A 5 Maximum DC Reverse Current at Rated T =25 uA A I R DC Blocking Voltage T =125 100 uA A Maximum Reverse Recovery Time (Note 2) Trr 35 nS Typical Junction Capacitance (Note 3) Cj 16 18 pF R 85 JA O Maximum Thermal Resistance C/W R 35 JL O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied V =4.0 Volts R Version:G11RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J) FIG. 2- TYPICAL INSTANTANEOUS FIG.1- MAXIMUM FORWARD CURRENT DERATING FORWARD CHARACTERISRICS CURVE 100 1.2 TA=25 Pulse Width=300us 1 1% Duty Cycle RESISTER OR 0.8 ES1F-1G INDUCTIVE LOAD 10 0.6 ES1A-D 0.4 0.2 1 0 80 90 100 110 120 130 140 150 o LEAD TEMPERATURE ( C) 0.1 ES1H-1J 0.01 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD PEAK 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 SURGE CURRENT FORWARD VOLTAGE (V) 30 8.3mS Single Half Sine Wave 25 (JEDEC Method) 20 15 FIG. 5- TYPICAL REVERSE CHARACTERISTICS 1000 10 5 0 100 1 10 100 TA=125 NUMBER OF CYCLES AT 60 Hz 10 TA=75 FIG. 4- TYPICAL JUNCTION CAPACITANCE 1 100 TA=25 ES1F-J 0.1 ES1A-D 10 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1 0.1 1 10 100 REVERSE VOLTAGE (V) Version:G11 AVERAGE FORWARD A PEAK FORWARD SURGE A JUNCTION CAPACITANCE (pF) CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE A CURRENT (uA) INSTANTANEOUS FORWARD A CURRENT (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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