ES1G F3 Taiwan Semiconductor

ES1A - ES1J 1.0AMP. Surface Mount Super Fast Rectifiers SMA/DO-214AC RoHRoHSS Pb COCOMMPPLILIANANCCEE Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain rellef Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260 /10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Qualified as per AEC-Q101 Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Cases: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free ES1X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packing: 12mm tape per EIA STD RS-481 Y = Year Weight: 0.064 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% ES ES ES ES ES ES ES ES Type Number Symbol Units 1A 1B 1C 1D 1F 1G 1H 1J Maximum Recurrent Peak Reverse Voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS Voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC Blocking Voltage V 50 100 150 200 300 400 500 600 V DC Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 0.95 1.3 1.7 V F 1 A 5 Maximum DC Reverse Current at Rated T =25 uA A I R DC Blocking Voltage T =125 100 uA A Maximum Reverse Recovery Time (Note 2) Trr 35 nS Typical Junction Capacitance (Note 3) Cj 16 18 pF R 85 JA O Maximum Thermal Resistance C/W R 35 JL O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied V =4.0 Volts R Version:G11RATINGS AND CHARACTERISTIC CURVES (ES1A THRU ES1J) FIG. 2- TYPICAL INSTANTANEOUS FIG.1- MAXIMUM FORWARD CURRENT DERATING FORWARD CHARACTERISRICS CURVE 100 1.2 TA=25 Pulse Width=300us 1 1% Duty Cycle RESISTER OR 0.8 ES1F-1G INDUCTIVE LOAD 10 0.6 ES1A-D 0.4 0.2 1 0 80 90 100 110 120 130 140 150 o LEAD TEMPERATURE ( C) 0.1 ES1H-1J 0.01 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD PEAK 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 SURGE CURRENT FORWARD VOLTAGE (V) 30 8.3mS Single Half Sine Wave 25 (JEDEC Method) 20 15 FIG. 5- TYPICAL REVERSE CHARACTERISTICS 1000 10 5 0 100 1 10 100 TA=125 NUMBER OF CYCLES AT 60 Hz 10 TA=75 FIG. 4- TYPICAL JUNCTION CAPACITANCE 1 100 TA=25 ES1F-J 0.1 ES1A-D 10 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1 0.1 1 10 100 REVERSE VOLTAGE (V) Version:G11 AVERAGE FORWARD A PEAK FORWARD SURGE A JUNCTION CAPACITANCE (pF) CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE A CURRENT (uA) INSTANTANEOUS FORWARD A CURRENT (A)