MBR2045CT C0 Taiwan Semiconductor

MBR2035CT MBR20200CT Taiwan Semiconductor 20A, 35V - 200V Schottky Barrier Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified available PARAMETER VALUE UNIT Low power loss, high efficiency I 20 A F Guard ring for overvoltage protection V 35 - 200 V RRM High surge current capability RoHS Compliant I 150 A FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package TO-220AB APPLICATIONS Configuration Dual dies Switching mode power supply (SMPS) Adapters DC to DC converters MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Mounting torque: 0.56 N m maximum Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.88g (approximately) TO-220AB ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR 2035 2045 2050 2060 2090 20100 20150 20200 PARAMETER SYMBOL UNIT CT CT CT CT CT CT CT CT MBR MBR MBR MBR MBR MBR MBR MBR Marking code on the 2035 2045 2050 2060 2090 20100 20150 20200 device CT CT CT CT CT CT CT CT Repetitive peak V 35 45 50 60 90 100 150 200 V RRM reverse voltage Reverse voltage, total V 24 31 35 42 63 70 105 140 V R(RMS) rms value Forward current I 20 A F Surge peak forward current, 8.3ms single half sine wave I 150 A FSM superimposed on rated load Peak repetitive reverse (1) I 1 0.5 A RRM surge current Peak repetitive forward current (Rated V , I 20 A R FRM Square wave, 20KHz) 1 Version: M2104 MBR2035CT MBR20200CT Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A MBR MBR MBR MBR MBR MBR MBR MBR 2035 2045 2050 2060 2090 20100 20150 20200 PARAMETER SYMBOL UNIT CT CT CT CT CT CT CT CT Critical rate of rise of off- dv/dt 10,000 V/s state voltage Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG Notes: 1. tp = 2.0s, 1.0KHz THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT MBR2035CT MBR2045CT Junction-to-case thermal resistance R 1 C/W JC MBR2050CT MBR2060CT MBR2090CT MBR20100CT Junction-to-case thermal resistance R 2 C/W JC MBR20150CT MBR20200CT ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT MBR2035CT - - V MBR2045CT MBR2050CT - 0.80 V MBR2060CT I = 10A, T = 25C F J MBR2090CT - 0.85 V MBR20100CT MBR20150CT - 0.99 V MBR20200CT MBR2035CT - 0.84 V MBR2045CT MBR2050CT MBR2060CT I = 20A, T = 25C - 0.95 V F J MBR2090CT MBR20100CT MBR20150CT - 1.23 V Forward voltage per MBR20200CT V (1) F diode MBR2035CT - 0.57 V MBR2045CT MBR2050CT - 0.70 V MBR2060CT I = 10A, T = 125C F J MBR2090CT - 0.75 V MBR20100CT MBR20150CT - 0.87 V MBR20200CT MBR2035CT - 0.72 V MBR2045CT MBR2050CT MBR2060CT I = 20A, T = 125C - 0.85 V F J MBR2090CT MBR20100CT MBR20150CT - 1.10 V MBR20200CT 2 Version: M2104