MBS10 RCG Taiwan Semiconductor

MBS2 - MBS10 Taiwan Semiconductor CREAT BY ART 0.8A, 200V - 1000V Glass Passivated Bridge Rectifiers FEATURES - Ideal for automated placement - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File E-326854 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MBS MECHANICAL DATA Case: Molded plastic body Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Polarity as marked on the body Weight: 0.12 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL MBS2 MBS4 MBS6 MBS8 MBS10 Unit Maximum repetitive peak reverse voltage V 200 400 600 800 1000 V RRM Maximum RMS voltage V 140 280 420 560 700 V RMS Maximum DC blocking voltage V 200 400 600 800 1000 V DC Maximum average forward rectified current I On glass-epoxy P.C.B. 0.5 A F(AV) On aluminum substrate 0.8 Peak forward surge current, 8.3 ms single half sine-wave I 35 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.0 V F I = 0.4 A F Maximum DC reverse current T =25 C 5 J I A R at rated DC blocking voltage T =125 C 100 J 2 2 Rating for fusing (t<8.3ms) 5.08 ItA s C Typical junction capacitance per leg (Note 2) 13 pF J (Note 3) R JL 20 R Typical thermal resistance (Note 4) 70 C/W JA 85 R (Note 3) JA Operating junction temperature range T - 55 to +150 C J T Storage temperature range - 55 to +150 C STG Note 1: Pulse Test with PW=300s,1% Duty Cycle Note 2: Measure at 1.0MHz and Applied Reverse Voltage of 4.0 Volts D.C. Note 3: On glass epoxy P.C.B. mounted on 0.05 x 0.05 (1.3mm x 1.3mm) pads Note 4: On aluminum substrate P.C.B. with an area of 0.8 x 0.8 (20mm x 20mm) mounted on 0.05 x 0.05 (1.3mm x 1.3mm) solder pads Document Number: DS D1410054 Version: O15MBS2 - MBS10 Taiwan Semiconductor ORDERING INFORMATION PART NO. PART NO. PACKING PACKING CODE PACKAGE PACKING SUFFIX CODE SUFFIX MBSx H RC G MBS 3,000 / 13 Paper reel (Note 1, 2) Note 1: defines voltage from 200V (MBS2) to 1000V (MBS10) Note 2: Whole series with green compound EXAMPLE PREFERRED PART NO. PACKING CODE PACKING CODE DESCRIPTION PART NO. PART NO. SUFFIX SUFFIX AEC-Q101 qualified MBS10HRCG MBS10HGRC Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 MAXIMUM FORWARD CURRENT DERATING FIG. 2 TYPICAL REVERSE CHARACTERISTICS CURVE PER LEG 1 100 RESISTIVE OR INDUCTIVE LOAD WITH HEATSINK 0. 8 Aluminum Substrate 10 T =125C J 0. 6 1 0. 4 0. 1 Glass Epoxy P.C.B. 0. 2 T =25C J 0 0. 01 0 20 406080 100 0 2040 6080 100 120 140 160 o AMBIENT TEMPERATURE ( C) PERCENT OF RATED PEAK REVERSE VOLYAGE(%) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD FIG. 4 TYPICAL FORWARD CHARACTERISTICS SURGE CURRENT PER LEG PER LEG 35 10 Single Half Sine-Wave 30 25 F=60Hz 20 1 15 F=50Hz 10 5 0 0. 1 110 100 0. 2 0.4 0. 6 0.8 1 1.2 1. 4 1.6 NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V) Document Number: DS D1410054 Version: O15 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A) INSTANTANEOUS FORWARD A CURRENT (A)