MUR460SHR7G Taiwan Semiconductor

MUR420S - MUR460S Taiwan Semiconductor 4A, 200V - 600V Surface Mount Ultrafast Power Rectifier FEATURES KEY PARAMETERS Glass passivated junction PARAMETER VALUE UNIT Ideal for automated placement I 4 A F(AV) Built-in strain relief V 200 - 600 V RRM Ultrafast recovery time for high efficiency Compliant to RoHS Directive 2011/65/EU and I 75 A FSM in accordance to WEEE 2002/96/EC T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AB (SMC) Configuration Single die APPLICATIONS High frequency rectification Freewheeling application Switching mode converters and inverters in computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.25 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SYMBOL MUR420S MUR440S MUR460S UNIT PARAMETER Marking code on the device MUR420S MUR440S MUR460S Repetitive peak reverse voltage V 200 400 600 V RRM Reverse voltage, total rms value V 140 280 420 V R(RMS) Maximum DC blocking voltage V 200 400 600 V DC Forward current I 4 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed on rated I 75 A FSM load per diode Junction temperature T - 55 to +175 C J Storage temperature T - 55 to +175 C STG 1 Version:E1903 MUR420S - MUR460S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance per diode R 45 C/W JA Junction-to-case thermal resistance per diode R 8.5 C/W JC ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT MUR420S - 0.875 V I = 4A, T = 25C V F J F MUR440S - 1.250 V MUR460S (1) Forward voltage per diode MUR420S - 0.710 V I = 4A, T = 150C V F J F MUR440S - 1.050 V MUR460S MUR420S - 5 A T = 25C I J R MUR440S - 10 A Reverse current rated V MUR460S R (2) per diode MUR420S - 150 A T = 150C I J R MUR440S - 250 A MUR460S Junction capacitance 1 MHz, V =4.0V C 65 - pF R J MUR420S - 25 ns I =0.5A , I =1.0A F R Reverse recovery time t rr MUR440S I =0.25A - 50 ns RR MUR460S Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:E1903