X-On Electronics has gained recognition as a prominent supplier of P6KE33A ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P6KE33A ESD Suppressors / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

P6KE33A Taiwan Semiconductor

P6KE33A electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.P6KE33A
Manufacturer: Taiwan Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 600W 33.1V 5% Unidir ectional TVS
Datasheet: P6KE33A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.363 ea
Line Total: USD 0.36 
Availability - 10289
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10289
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.363
10 : USD 0.2464
100 : USD 0.1683
500 : USD 0.1342
1000 : USD 0.121
3500 : USD 0.1111
7000 : USD 0.0968
24500 : USD 0.0924

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
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We are delighted to provide the P6KE33A from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P6KE33A and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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P6KE6V8(C)A P6KE440(C)A Taiwan Semiconductor 600W Transient Voltage Suppressors FEATURES Glass passivated junction 600W peak pulse power capability at 1.0ms Excellent clamping capability Low incremental surge resistance Fast response time: Typically < 1.0ps from 0 V to BV for uni-directional, 5.0 ns for bidirectional Typical I : 1.0A above 10V DO-15 R COLOR BAND DENOTES CATHODE ON UNIDIRECTIONAL DEVICES ONLY. NO APPLICATIONS COLOR BAND ON BIDIRECTIONAL DEVICES. Devices for bipolar applications Bi-directional types use CA suffix Electrical characteristics apply in both directions ABSOLUTE MAXIMUM RATINGS Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation t =1ms P 600 W p PPM Peak pulse current I see table A PPM Power dissipation P 5.0 W D .375 inch lead length at T =75C A Non-Repetitive Peak Forward Surge Current I 100 A (1) FSM Superimposed on Rated Load (JEDEC Method) T -65 to +175 C Junction temperature J T -65 to +175 C Storage temperature STG Note: 1. Measured on 8.3ms single half-sine wave duty cycle = 4 pulses per minute maximum. 1 Version: B1910 P6KE6V8(C)A P6KE440(C)A Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Breakdown Reverse Reverse Test Clamping Temperature Voltage Uni-directional Stand-Off Peak Pulse Leakage Current Voltage at Coefficient V Bi-directional (C) Voltage BR Current Current at I I V T PPM BR (V) Device V I (A) V RWM PPM RWM (mA) V (V) (%/C) C (2) (V) I (A) R Min. Max. P6KE6V8(C)A 5.80 6.45 7.14 10 10.5 57.1 1000 0.057 P6KE7V5(C)A 6.40 7.13 7.88 10 11.3 53.1 500 0.061 P6KE8V2(C)A 7.02 7.79 8.61 10 12.1 50 200 0.065 P6KE9V1(C)A 7.78 8.65 9.55 1 13.4 45 50 0.068 P6KE10(C)A 8.55 9.5 10.5 1 14.5 41 10 0.073 P6KE11(C)A 9.40 10.5 11.6 1 15.6 38 5 0.075 P6KE12(C)A 10.2 11.4 12.6 1 16.7 36 5 0.078 P6KE13(C)A 11.1 12.4 13.7 1 18.2 33 5 0.081 P6KE15(C)A 12.8 14.3 15.8 1 21.2 28 5 0.084 P6KE16(C)A 13.6 15.2 16.8 1 22.5 27 5 0.086 P6KE18(C)A 15.3 17.1 18.9 1 25.2 24 5 0.088 P6KE20(C)A 17.1 19 21 1 27.7 22 5 0.090 P6KE22(C)A 18.8 20.9 23.1 1 30.6 20 5 0.092 P6KE24(C)A 20.5 22.8 25.2 1 33.2 18.1 5 0.094 P6KE27(C)A 23.1 25.7 28.4 1 37.5 16.0 5 0.096 P6KE30(C)A 25.6 28.5 31.5 1 41.4 14.5 5 0.097 P6KE33(C)A 28.2 31.4 34.7 1 45.7 13.2 5 0.098 P6KE36(C)A 30.8 34.2 37.8 1 49.9 12.0 5 0.099 P6KE39(C)A 33.3 37.1 41 1 53.9 11.2 5 0.100 P6KE43(C)A 36.8 40.9 45.2 1 59.3 10.1 5 0.101 P6KE47(C)A 40.2 44.7 49.4 1 64.8 9.3 5 0.101 P6KE51(C)A 43.6 48.5 53.6 1 70.1 8.6 5 0.102 P6KE56(C)A 47.8 53.2 58.8 1 77.0 7.8 5 0.103 P6KE62(C)A 53.0 58.9 65.1 1 85.0 7.1 5 0.104 P6KE68(C)A 58.1 64.6 71.4 1 92.0 6.5 5 0.104 P6KE75(C)A 64.1 71.3 78.8 1 103 5.8 5 0.105 P6KE82(C)A 70.1 77.9 86.1 1 113 5.3 5 0.105 P6KE91(C)A 77.8 86.5 95.5 1 125 4.8 5 0.106 2 Version: B1910

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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