P6SMB12A R4 Taiwan Semiconductor

P6SMB SERIES Taiwan Semiconductor CREAT BY ART Surface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Typical IR less than 1A above 10V - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DO-214AA (SMB) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.09 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Peak power dissipation at T =25, tp=1ms (Note 1) P 600 Watts A PK Steady state power dissipation P 3 Watts D Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Maximum instantaneous forward voltage at 50 A for V 3.5 / 5.0 Volts F Unidirectional only (Note 2) R 10 JC Typical thermal resistance /W R 55 JA O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 C STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Note 2: V =3.5V on P6SMB6.8 thru P6SMB91 Devices and V =5.0V on P6SMB100 thru P6SMB220 Device. F F Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types P6SMB6.8 thru Types P6SMB220A 2. Electrical Characterstics Apply in Both Directions ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R5 SMB 850 / 7 Plastic reel P6SMBxxxx Prefix R4 Suffix SMB 3,000 / 13 Paper reel (Note 1) M4 SMB 3,000 / 13 Plastic reel Note 1:xxx defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A) EXAMPLE AEC-Q101 GREEN PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED COMPOUND P6SMB20A R5 P6SMB20A R5 P6SMB20A R5G P6SMB20A R5 G Green compound P6SMB20AHR5 H R5 AEC-Q101 qualified P6SMB20A Document Number: DS D1405062 Version: J14P6SMB SERIES Taiwan Semiconductor CREAT BY ART RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 10 75 50 1 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) tp, PULSE WIDTH, (s) A FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 100 140 as the POINT WHERE the PEAK tr=10s CURRENT DECAYS to 50% OF IPPM 8.3ms Single Half Sine Wave 120 Peak Value IPPM 100 Half Value-IPPM/2 80 10/1000s, WAVEFORM as DEFINED by R.E.A. 60 40 20 td 0 10 00.5 1 1.522.5 33.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 10000 VR=0 1000 MEASURED at STAND-OFF 100 VOLTAGE,Vwm f=1.0MHz Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Document Number: DS D1405062 Version: J14 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP DERATING IN PERCENTAGE (%)