X-On Electronics has gained recognition as a prominent supplier of P6SMB200A R4 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. P6SMB200A R4 ESD Suppressors / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

P6SMB200A R4 Taiwan Semiconductor

P6SMB200A R4 electronic component of Taiwan Semiconductor
P6SMB200A R4 Taiwan Semiconductor
P6SMB200A R4 ESD Suppressors / TVS Diodes
P6SMB200A R4  Circuit Protection

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See Product Specifications
Part No. P6SMB200A R4
Manufacturer: Taiwan Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 600W,200V,5%,UNI, TVS
Datasheet: P6SMB200A R4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 0.2739 ea
Line Total: USD 0.82 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 3
Multiples : 1
3 : USD 0.2739
25 : USD 0.1627
100 : USD 0.1368
104 : USD 0.1233
285 : USD 0.1166

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the P6SMB200A R4 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the P6SMB200A R4 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor FEATURES FEATURES KEY PARAMETERS Low profile package PARAMETER VALUE UNIT Ideal for automated placement V 5.5 - 185 V WM Glass passivated junction V (uni-directional) 6.8 - 220 V BR Built-in strain relief P 600 W Excellent clamping capability PPSM Typical I less than 1A above 10V R T 150 C J MAX Fast response time: Typically less than Package DO-214AA (SMB) 1.0ps from 0 volt to BV min Configuration Single die Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS Switching mode power supply (SMPS) Adapters TV Monitor MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Part no. with suffix means AEC-Q101 qualified DO-214AA (SMB) Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.09 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PART NUMBER UNIT Non-repetitive peak impulse power dissipation with P 600 W PPSM 10/1000s waveform (1) Steady state power dissipation at T =25C P 3 W A tot Peak forward surge current, 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load (2) V 3.5/5.0 V Forward Voltage I =50A for Uni-directional only F F T -55 to +150 C Junction temperature J T -55 to +150 C Storage temperature STG Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25C Per Fig. 2 A 2. V =3.5V on P6SMB6.8 - P6SMB91 Devices and V =5.0V on P6SMB100 - P6SMB220 Device. F F Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types P6SMB6.8 - types P6SMB220A 2. Electrical characteristics apply in both directions 1 Version:N1701 P6SMB6.8(A) - P6SMB220(A) Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-case thermal resistance R 10 C/W JC Junction-to-ambient thermal resistance R 55 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Maximum Maximum Maximum Breakdown Stand-Off Maximum Device Test Reverse Peak Pulse clamping voltage Voltage Temperature Device Marking Current Leakage Current voltage V (V) BR V Coefficient of WM Code I (mA) V I (A) V I (Note 1) T WM PPM C PP (V) V (%/C) BR I (A) (Note 2) (V) D Min. Max. P6SMB6.8 KDJ 6.12 7.48 10 5.50 1000 58 10.8 0.057 P6SMB6.8A KEJ 6.46 7.14 10 5.80 1000 60 10.5 0.057 P6SMB7.5 KFJ 6.75 8.25 10 6.05 500 53 11.7 0.061 P6SMB7.5A KGJ 7.13 7.88 10 6.40 500 55 11.3 0.061 P6SMB8.2 KHJ 7.38 9.02 10 6.63 200 50 12.5 0.065 P6SMB8.2A KKJ 7.79 8.61 10 7.02 200 52 12.1 0.065 P6SMB9.1 KLJ 8.19 10.00 1.0 7.37 50 45 13.8 0.068 P6SMB9.1A KMJ 8.65 9.55 1.0 7.78 50 47 13.4 0.068 P6SMB10 KNJ 9.00 11.00 1.0 8.10 10 42 15.0 0.073 P6SMB10A KPJ 9.50 10.5 1.0 8.55 10 43 14.5 0.073 P6SMB11 KQJ 9.90 12.1 1.0 8.92 1 38 16.2 0.075 P6SMB11A KRJ 10.5 11.6 1.0 9.40 1 40 15.6 0.075 P6SMB12 KSJ 10.8 13.2 1.0 9.72 1 36 17.3 0.078 P6SMB12A KTJ 11.4 12.6 1.0 10.2 1 37 16.7 0.078 P6SMB13 KUJ 11.7 14.3 1.0 10.5 1 33 19.0 0.081 P6SMB13A KVJ 12.4 13.7 1.0 11.1 1 34 18.2 0.081 P6SMB15 KWJ 13.5 16.5 1.0 12.1 1 28 22.0 0.084 P6SMB15A KXJ 14.3 15.8 1.0 12.8 1 29 21.2 0.084 P6SMB16 KYJ 14.4 17.6 1.0 12.9 1 26 23.5 0.086 P6SMB16A KZJ 15.2 16.8 1.0 13.6 1 28 22.5 0.086 P6SMB18 LDJ 16.2 19.8 1.0 14.5 1 23 26.5 0.088 P6SMB18A LEJ 17.1 18.9 1.0 15.3 1 25 25.5 0.088 P6SMB20 LFJ 18.0 22.0 1.0 16.2 1 21 29.1 0.090 P6SMB20A LGJ 19.0 21.0 1.0 17.1 1 22 27.7 0.090 P6SMB22 LHJ 19.8 24.2 1.0 17.8 1 19 31.9 0.092 P6SMB22A LKJ 20.9 23.1 1.0 18.8 1 20 30.6 0.092 P6SMB24 LLJ 21.6 26.4 1.0 19.4 1 18 34.7 0.094 P6SMB24A LMJ 22.8 25.2 1.0 20.5 1 19 33.2 0.094 P6SMB27 LNJ 24.3 29.7 1.0 21.8 1 16 39.1 0.096 P6SMB27A LPJ 25.7 28.4 1.0 23.1 1 16.8 37.5 0.096 P6SMB30 LQJ 27.0 33.0 1.0 24.3 1 14.0 43.5 0.097 P6SMB30A LRJ 28.5 31.5 1.0 25.6 1 15.0 41.4 0.097 P6SMB33 LSJ 29.7 36.3 1.0 26.8 1 13.0 47.7 0.098 P6SMB33A LTJ 31.4 34.7 1.0 28.2 1 13.8 45.7 0.098 P6SMB36 LUJ 32.4 39.6 1.0 29.1 1 12.0 52.0 0.099 P6SMB36A LVJ 34.2 37.8 1.0 30.8 1 12.6 49.9 0.099 P6SMB39 LWJ 35.1 42.9 1.0 31.6 1 11.1 56.4 0.100 P6SMB39A LXJ 37.1 41.0 1.0 33.3 1 11.6 53.9 0.100 P6SMB43 LYJ 38.7 47.3 1.0 34.8 1 10.0 61.9 0.101 P6SMB43A LZJ 40.9 45.2 1.0 36.8 1 10.6 59.3 0.101 P6SMB47 MDJ 42.3 51.7 1.0 38.1 1 9.2 67.8 0.101 P6SMB47A MEJ 44.7 49.4 1.0 40.2 1 9.7 64.8 0.101 P6SMB51 MFJ 45.9 56.1 1.0 41.3 1 8.5 73.5 0.102 2 Version:N1701

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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