RMB2SHRCG Taiwan Semiconductor

RMB2S - RMB6S Taiwan Semiconductor 0.8A, 200V - 600V Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Reliable low cost construction utilizing molded plastic I 0.8 A F(AV) technique V 200 - 600 V RRM High surge current capability Small size, simple installation I 30 A FSM UL Recognized File E-326243 T 150 C J MAX Moisture sensitivity level: level 1, per J-STD-020 Package TO-269AA (MBS) Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Configuration Quad Halogen-free according to IEC 61249-2-21 APPLICATIONS Switching mode power supply (SMPS) Lighting application MECHANICAL DATA Case: TO-269AA (MBS) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test TO-269AA (MBS) Polarity: As marked Weight: 0.12g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A RMB2S RMB4S RMB6S PARAMETER SYMBOL UNIT Marking code on the device RMB2S RMB4S RMB6S Repetitive peak reverse voltage V 200 400 600 V RRM Reverse voltage, total rms value V 140 280 420 V R(RMS) Maximum DC blocking voltage V 200 400 600 V DC Maximum average forward current 60Hz sine wave 0.5 A resistance load on glass-epoxy P.C.B. I F(AV) Maximum average forward current 60Hz sine wave 0.8 A resistance load on aluminum substrate Surge peak forward current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load per diode 2 2 Rating for fusing (t<8.3ms) I t 3.74 A s Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version: H1810 RMB2S - RMB6S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance per diode R 85 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) I = 0.4A, T = 25C - 1 Forward voltage per diode V V F J F - 5 T = 25C J A (2) Reverse current rated V per diode I R R T = 125C - 100 A J 13 - Junction capacitance 1 MHz, V =4.0V C pF R J I =0.5A,I =1.0A F R - 150 Reverse recovery time t ns rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKING PACKING CODE PART NO. PACKAGE PACKING SUFFIX(*) CODE SUFFIX RC 3,000 / 13 Paper reel RMBxS G MBS H MC 3,000 / 13 Plastic reel (Note 1, 2) Notes: 1. defines voltage from 200V (RMB2S) to 600V (RMB6S) 2. Whole series with green compound (halogen-free) *: Optional available EXAMPLE PART NO. PACKING PACKING CODE EXAMPLE P/N PART NO. DESCRIPTION SUFFIX CODE SUFFIX Green compound RMB2SHRCG RMB2S RC H G AEC-Q101 qualified 2 Version: H1810