RS3DB-T - RS3MB-T Taiwan Semiconductor 3A, 200V-1000V Fast Recovery Surface Mount Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 3 A F Low reverse leakage V 200-1000 V RRM Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and I 80 A FSM in accordance to WEEE 2002/96/EC T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AA (SMB) APPLICATIONS Switch Mode Power Supply Inverters and Converters Free Wheeling diodes MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1 whisker test Polarity: Indicated by cathode band DO-214AA (SMB) Weight: 0.09 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A RS3DB RS3GB RS3JB RS3KB RS3MB PARAMETER SYMBOL UNIT -T -T -T -T -T Marking code on the device RS3DB RS3GB RS3JB RS3KB RS3MB Repetitive peak reverse voltage V 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 140 280 420 560 700 V R(RMS) DC blocking voltage V 200 400 600 800 1000 V DC Forward current I 3 A F Surge peak forward 8.3 ms at T = 25C 80 A A current single half sine- I FSM wave superimposed on 1.0 ms at T = 25C 224 A A rated load per diode Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:A1905 RS3DB-T - RS3MB-T Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode R 20 C/W JL Junction-to-ambient thermal resistance per diode R 78 C/W JA Junction-to-case thermal resistance per diode R 26 C/W JC Thermal Performance Note: Units mounted on PCB (10mm x 10mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1.5A, T = 25C 0.94 - V F J I = 3A, T = 25C 1.02 1.3 V F J RS3DB-T to RS3GB-T V F I = 1.5A, T = 125C 0.78 - V F J I = 3A, T =125C 0.87 1.17 V F J I = 1.5A, T = 25C 0.99 - V F J I = 3A, T = 25C 1.10 1.3 V F J (1) RS3JB-T Forward voltage per diode V F I = 1.5A, T = 125C 0.80 - V F J I = 3A, T = 125C 0.90 1.16 V F J I = 1.5A, T = 25C 1.03 - V F J I = 3A, T = 25C 1.13 1.3 V F J RS3KB-T to RS3MB-T V F I = 1.5A, T = 125C 0.83 - V F J I = 3A, T = 125C 0.94 1.14 V F J T = 25C A J - 5 (2) Reverse current rated V per diode I R R T = 125C A - 150 J RS3DB-T to RS3GB-T 150 ns - I =0.5A,I =1.0A, F R Reverse recovery time RS3JB-T t 250 ns - rr Irr=0.25A RS3KB-T to RS3MB-T - 500 ns Junction capacitance per diode 1 MHz, V =4.0V C 50 - pF R J Notes: (1) Pulse test with PW=0.3 ms (2) Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING (1) RS3XB-T R5G SMB 850 / 7 Plastic reel (1) RS3XB-T M4G SMB 3,000 / 13 Plastic reel (1) RS3XB-T R4G SMB 3,000 / 13 Paper reel Notes: (1) X defines voltage from 200V(RS3DB-T) to 1000V(RS3MB-T) 2 Version:A1905