X-On Electronics has gained recognition as a prominent supplier of RTBS40M M2G Bridge Rectifiers across the USA, India, Europe, Australia, and various other global locations. RTBS40M M2G Bridge Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bridge Rectifiers, ensuring timely deliveries around the world.

RTBS40M M2G Taiwan Semiconductor

RTBS40M M2G electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.RTBS40M M2G
Manufacturer: Taiwan Semiconductor
Category: Bridge Rectifiers
Description: Bridge Rectifiers 300ns 4A 1000V Fast Recovery Bridge Rectifier
Datasheet: RTBS40M M2G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0514 ea
Line Total: USD 1.05 
Availability - 1125
Ship by Tue. 15 Oct to Thu. 17 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1125
Ship by Tue. 15 Oct to Thu. 17 Oct
MOQ : 1
Multiples : 1
1 : USD 1.0514
10 : USD 0.8713
100 : USD 0.697
500 : USD 0.6069
1000 : USD 0.5085
1800 : USD 0.4872
3600 : USD 0.4872
9000 : USD 0.4671
23400 : USD 0.4552

   
Manufacturer
Product Category
Mounting Style
Package / Case
If - Forward Current
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Length
Width
Height
Packaging
Hts Code
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We are delighted to provide the RTBS40M M2G from our Bridge Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RTBS40M M2G and other electronic components in the Bridge Rectifiers category and beyond.

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RTBS40M Taiwan Semiconductor 4A, 1000V Fast Recovery Glass Passivated Bridge Rectifier FEATURES KEY PARAMETERS Glass passivated junction PARAMETER VALUE UNIT Ideal for automated placement I 4.0 A F UL Recognized File E-326854 V 1000 V RRM Moisture sensitivity level: level 1, per J-STD-020 I 110 A RoHS Compliant FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package TBS APPLICATIONS Configuration Quad Switching mode power supply (SMPS) Adapters TV Monitor MECHANICAL DATA Case: TBS Molding compound meets UL 94V-0 flammability rating Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1 whisker test Polarity: As marked Weight: 0.350 g (approximately) TBS ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL RTBS40M UNIT Marking code on the device RT40M Repetitive peak reverse voltage V 1000 V RRM Reverse voltage, total rms value V 700 V R(RMS) Forward current I 4 A F Surge peak forward current single half 8.3 ms at T = 25C A 110 A sine-wave superimposed on rated load I FSM 1.0 ms at T = 25C A 290 A per diode 2 2 2 I t value (of a surge on-state current) at 8.3ms I t 50 A s Junction temperature T -55 to +150 C J Storage temperature T -55 to +150 C STG 1 Version:A2005 RTBS40M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 17 C/W JL Junction-to-ambient thermal resistance R 58 C/W JA Junction-to-case thermal resistance R 15 C/W JC Thermal Performance Note: Units mounted on recommended PCB (16mm x 16mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 2.0 A, T = 25C 1.01 - F J V I = 4.0 A, T = 25C 1.10 1.30 V F J (1) Forward voltage per diode V F I = 2.0 A, T = 125C 0.85 - V F J I = 4.0 A, T = 125C 0.95 1.17 V F J T = 25C - 5 J A (2) Reverse current rated V per diode I R R T = 125C - 200 A J 1 MHz, V =4.0V 32 - Junction capacitance per diode R C pF J I =0.5A , I =1.0A F R - 300 Reverse recovery time per diode t ns rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION ORDERING CODE PACKAGE PACKING RTBS40M M2G TBS 1,800 / 13 Reel 2 Version:A2005

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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