SK110B R4 Taiwan Semiconductor

SK12B - SK115B Taiwan Semiconductor 1A, 20V - 150V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 1 A F(AV) Guard ring for over-voltage protection V 20 - 150 V RRM High surge current capability I 30 A Compliant to RoHS Directive 2011/65/EU and FSM in accordance to WEEE 2002/96/EC Package DO-214AA (SMB) Halogen-free according to IEC 61249-2-21 Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix means green compound (halogen-free) Part no. with suffix H means AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.093 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SK SK SK SK SK SK SK SK PARAMETER SYMBOL UNIT 12B 13B 14B 15B 16B 19B 110B 115B SK SK SK SK SK SK SK SK Marking code on the device 12B 13B 14B 15B 16B 19B 110B 115B Repetitive peak reverse voltage V 20 30 40 50 60 90 100 150 V RRM Reverse voltage, total rms value V 14 21 28 35 42 63 70 105 V R(RMS) Maximum DC blocking voltage V 20 30 40 50 60 90 100 150 V DC Forward current I 1 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed I 30 A FSM on rated load per diode Critical rate of rise of off-state voltage dV/dt 10000 V/s Junction temperature T - 55 to +125 - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:K1701 SK12B - SK115B Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance R 25 C/W JL ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT SK12B V SK13B - 0.50 V SK14B V SK15B V (1) - 0.75 Forward voltage per diode I = 1A,T = 25C V F J F SK16B V SK19B V - 0.85 SK110B V SK115B - 0.95 V SK12B mA SK13B mA SK14B - 0.5 mA Reverse current rated V per SK15B mA R T = 25C I J R (2) diode SK16B mA SK19B mA SK110B - 0.1 mA SK115B mA SK12B mA - 10 SK13B mA SK14B mA Reverse current rated V per SK15B mA R - 5 T = 100C I (2) J R SK16B mA diode SK19B mA SK110B - - mA SK115B mA SK12B mA - - SK13B mA SK14B mA SK15B mA Reverse current rated V per R - - T = 125C I J R (2) SK16B mA diode SK19B mA SK110B - 2 mA SK115B mA Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:K1701