SMA4F51AH MWG Taiwan Semiconductor

SMA4F12AH - SMA4F60AH Taiwan Semiconductor 400W, 12V 60V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS AEC-Q101 qualified PARAMETER VALUE UNIT Glass passivated junction chip V 12 60 V WM Maximum V temperature coefficient: 0.095%/C BR V 13.4 74.1 V BR Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and P 400 W PPM in accordance to WEEE 2002/96/EC T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package Thin SMA APPLICATIONS Switching mode power supply (SMPS) Motor for BLDC Lighting application Battery Management System Automotive MECHANICAL DATA Case: Thin SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Thin SMA Meet JESD 201 class 2 whisker test Polarity: Uni-directional Weight: 30mg ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Non-repetitive peak impulse power dissipation with (1) P 400 W PPM 10/1000us waveform (2) Steady state power dissipation at T =25C P 7.5 W L D (3) Forward Voltage I =25A for Uni-directional only V 3.5 V F F Junction temperature T -55 to +175 C J Storage temperature T -55 to +175 C STG Notes: 1. Non-repetitive current pulse per fig. 3 and derated above T =25C per fig. 1 A 2. Units mounted on PCB (5mm x 5mm Cu pad test board) 3. Pulse test with PW=0.3 ms 1 Version: B1904 SMA4F12AH - SMA4F60AH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode R 20 C/W JL Junction-to-ambient thermal resistance per diode R 62 C/W JA Junction-to-case thermal resistance per diode R 16 C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Maximum Maximum Breakdown blocking Working Maximum peak impulse voltage Test leakage stand-off clamping current V I Marking BR T current current Part number voltage voltage I (V) code PPM I T V V I I V WM C PPM R WM (A) (Note 1) (mA) (V) (V) (A) tp =10/1000 s (Note 1) Min. Max. SMA4F12AH 4F012 13.4 14.8 1 12 1 20.5 19.5 SMA4F15AH 4F015 16.8 18.5 1 15 1 16.4 24.4 SMA4F18AH 4F018 20.1 22.2 1 18 1 13.7 29.2 SMA4F20AH 4F020 22.4 24.7 1 20 1 12.3 32.5 SMA4F21AH 4F021 23.5 25.9 1 21 1 11.7 34.1 SMA4F22AH 4F022 24.6 27.2 1 22 1 11.2 35.7 SMA4F24AH 4F024 26.8 29.6 1 24 1 10.3 39.0 SMA4F25AH 4F025 27.9 30.9 1 25 1 9.9 40.6 SMA4F26AH 4F026 29.1 32.1 1 26 1 9.5 42.2 SMA4F30AH 4F030 33.5 37.1 1 30 1 8.2 48.7 SMA4F33AH 4F033 36.9 40.8 1 33 1 7.5 53.6 SMA4F36AH 4F036 40.2 44.5 1 36 1 6.8 58.4 SMA4F39AH 4F039 43.6 48.2 1 39 1 6.3 63.3 SMA4F40AH 4F040 44.7 49.4 1 40 1 6.2 64.9 SMA4F43AH 4F043 48.1 53.1 1 43 1 5.7 69.8 SMA4F47AH 4F047 52.5 58.1 1 47 1 5.2 76.3 SMA4F51AH 4F051 57.0 63.0 1 51 1 4.8 82.8 SMA4F56AH 4F056 62.6 69.2 1 56 1 4.4 90.9 SMA4F60AH 4F060 67.1 74.1 1 60 1 4.1 97.4 Note: 1. Pulse test with PW=30 ms 2 Version: B1904