X-On Electronics has gained recognition as a prominent supplier of SMBJ15AR5 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMBJ15AR5 ESD Suppressors / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMBJ15AR5 Taiwan Semiconductor

SMBJ15AR5 electronic component of Taiwan Semiconductor
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Part No.SMBJ15AR5
Manufacturer: Taiwan Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: Diode TVS Single Uni-Dir 15V 600W 2-Pin SMB T/R
Datasheet: SMBJ15AR5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1700: USD 0.0414 ea
Line Total: USD 70.38 
Availability - 0
MOQ: 1700  Multiples: 850
Pack Size: 850
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1700
Multiples : 850
1700 : USD 0.0414

   
Manufacturer
Product Category
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We are delighted to provide the SMBJ15AR5 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMBJ15AR5 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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CREAT BY ART SMBJ SERIES 600 Watts Suface Mount Transient Voltage Suppressor SMB/DO-214AA RoHSRoHS Pb CCOOMMPPLILIANANCECE Features For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min Typical I less than 1uA above 10V R High temperature soldering guaranteed: 260 / 10 seconds at terminals Plastic material used carried Underwriters Laboratory Flammability Classification 94V-0 600 watts peak pulse power capability with a 10/1000 us waveform Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free XX = Specific Device Code Polarity: Indicated by cathode band except bipolar G = Green Compound Standard packaging: 12mm tape per EIA Std RS-481 Y = Year Weight: 0.093 gram M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol Value Unit Type Number Peak Power Dissipation at T =25, Tp=1ms(Note 1) P 600 Watts A PK Steady State Power Dissipation P 3 Watts D Peak Forward Surge Current, 8.3ms Single Half I Sine-wave Superimposed on Rated Load 100 Amps FSM (JEDEC method)(Note 2) - Unidirectional Only Maximum Instantaneous Forward Voltage at 50.0A for V 3.5 / 5.0 Volts F Unidirectional Only (Note 4) R 10 JC Typical Thermal Resistance /W R 55 JA Operating and Storage Temperature Range T , T -65 to +150 J STG Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Note 2: Mounted on 10 x 10mm Copper Pads to Each Terminal Note 3: V =3.5V on SMBJ5.0 thru SMBJ90 Devices and V =5.0V on SMBJ100 thru SMBJ170 Devices F F Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170 2. Electrical Characterstics Apply in Both Directions Version:G11RATINGS AND CHARACTERISTIC CURVES (SMBJ SERIES) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 TA = 25 10 75 50 1 25 0 0.1 0 25 50 75 100 125 150 175 200 0.1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) tp, PULSE WIDTH, (uS) A FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PULSE WIDTH(td) is DEFINED 100 140 tr=10usec as the POINT WHERE the PEAK 8.3mS Single Half Sine Wave CURRENT DECAYS to 50% OF IPPM 120 JEDEC Method Peak Value UNIDIRECTIONAL ONLY IPPM 100 Half Value-IPPM/2 80 10/1000usec, WAVEFORM 60 40 20 td 0 10 0 0.5 1 1.5 2 2.5 3 3.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 100000 10000 VR=0 1000 VR-RATED 100 TA=25 STAND-OFF f=1.0MHz VOLTAGE Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Version:G11 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM IFSM, PEAK FORWARD SURGE A PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP CURRENT (A) DERATING IN PERCENTAGE (%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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