SS115 Taiwan Semiconductor

CREAT BY ART SS12 - SS115 1.0AMP Surface Mount Schottky Barrier Rectifier SMA/DO-214AC RoRoHSHS Pb COCOMMPPLLIIANCANCEE Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classigication 94V-0 Epitaxial construction High temperature soldering guaranteed: 260 /10s at terminals High reliability grade (AEC-Q101 qualified) Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: JEDEC SMA/DO-214AC Molded plastic Marking Diagram Terminal: Pure tin plated, lead free = Specific Device Code SS1X Polarity: Indicated by cathode band G = Green Compound Packaging: 12 mm tape per EIA STD RS-481 Y = Year Weight: 0.066 gram M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SS SS SS SS SS SS SS SS Symbol Unit Type Number 12 13 14 15 16 19 110 115 Maximum Repetitive Peak Reverse Voltage V 20 30 40 50 60 90 100 150 V RRM Maximum RMS Voltage V 14 21 28 35 42 63 70 105 V RMS Maximum DC Blocking Voltage V 20 30 40 50 60 90 100 150 V DC Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) 1 A 25 V 0.5 0.75 0.80 0.95 V F 0.4 0.65 0.70 0.85 1 A 100 0.4 0.1 mA Maximum Reverse Current Rated VR T =25 A T =100 I A R 10 5 - mA T =125 A -- 2 mA Typical Junction Capecitance (Note 2) C 50 pF j R 28 jL O Typical Thermal Resistance C/W R 88 jA O Operating Temperature Range T - 65 to + 125 - 65 to + 150 J C O Storage Temperature Range T - 65 to + 150 STG C Note1: Pulse Test with PW=300u sec, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltagr of 4.0V D.C. Version:H11RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115) FIG.1 FORWARD CURRENT DERATING CUURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD 1.2 SURGE CURRENT 40 1 8.3ms Single Half Sine-Wave 0.8 30 SS12-SS14 SS15-SS115 0.6 20 0.4 10 0.2 RESISTIVE OR INDUCTIVE LOAD 0 0 50 60 70 80 90 100 110 120 130 140 150 160 170 1 10 100 o NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 SS12-SS14 100 SS15-SS115 TA=125 10 10 SS15-SS16 1 1 SS12-SS14 SS115 0.1 TA=75 0.1 0.01 SS19-SS110 TA=25 0.01 0.001 0 0.5 1 1.5 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 1000 SS12-SS14 SS15-SS16 SS19-SS115 10 100 TA=25 1 f=1.0MHz Vslg=50mVp-p 10 0.1 0.1 1 10 100 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) T-PULSE DURATION(s) Version:H11 INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD CURRENT CAPACITANCE (pF) (A) (A) TRANSIENT THERMAL PEAK FORWARD SURGE IMPEDANCE ( /W) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)