TSD1G Taiwan Semiconductor

TSD1G Taiwan Semiconductor 1A, 400V ESD Capability Rectifier FEATURES KEY PARAMETERS High ESD capability PARAMETER VALUE UNIT Glass passivated chip junction I 1 A F(AV) Ideal for automated placement V 400 V RRM Low forward voltage drop High surge current capability I 40 A FSM Moisture sensitivity level: level 1, per J-STD-020 V at I =2A 1 V F F AEC-Q101 qualified available: T 175 C J MAX ordering code with suffix H Compliant to RoHS Directive 2011/65/EU and Package DO-214AC (SMA) in accordance to WEEE 2002/96/EC Configuration Single die Halogen-free according to IEC 61249-2-21 APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.06 g (approximately) DO-214AC (SMA) SOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A TSD1G UNIT PARAMETER SYMBOL Marking code on the device TSD1G Repetitive peak reverse voltage 400 V V RRM Reverse voltage, total rms value 280 V V R(RMS) Forward current I 1 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 40 A FSM superimposed on rated load Junction temperature - 55 to +175 C T J Storage temperature - 55 to +175 C T STG 1 Version: D1903 TSD1G Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 39 C/W JL Junction-to-ambient thermal resistance R 86 C/W JA Junction-to-case thermal resistance R 43 C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1A, T = 25C 0.89 1.25 V F J I = 0.5A, T = 25C 0.85 1.00 V F J (1) Forward voltage per diode V F I = 1A, T = 125C 0.77 1.10 V F J I = 0.5A, T = 125C 0.72 0.90 V F J T = 25C - 1.00 A J (2) Reverse current rated V per diode I R R - 50 T = 125C J A 1 MHz, V =4.0V 14 - Junction capacitance C pF R J Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS (T = 25C unless otherwise noted) A Standard Test Type Test Conditions SYMBOL CLASS Value Typical Human body H3B 8kV AEC-Q101-001 C=100pF,R=1.5k N/A model(contact mode) 4 8kV 20kV Contact mode C=150pF,R=330 IEC 61000-4-2 Vc 4 15kV 25kV Air-discharge mode C=150pF,R=330 L4 15kV 20kV Contact mode C=330pF,R=330 ISO 10605 L4 25kV 25kV Air-discharge mode C=330pF,R=330 2 Version: D1903