US1M R3G Taiwan Semiconductor

US1A thru US1M Taiwan Semiconductor CREAT BY ART High Efficient Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Ultrafast recovery time for high efficiency - Built-in strain relief - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 DO-214AC (SMA) Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A US US US US US US US PARAMETER SYMBOL UNIT 1A 1B 1D 1G 1J 1K 1M Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.0 1.7 V F 1 A Maximum reverse current rated VR T =25 5 J I A R T =125 150 J Maximum reverse recovery time (Note 2) Trr 50 75 ns Typical junction capacitance (Note 3) Cj 15 10 pF R 27 jL O Typical thermal resistance C/W R 75 jA O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS D1405051 Version: J14US1A thru US1M Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel Prefix F3 Folded SMA 1,800 / 7 Plastic reel US1x Suffix (Note 1) F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel E3 Clip SMA 1,800 / 7 Plastic reel N/A E2 Clip SMA 7,500 / 13 Plastic reel Note 1: defines voltage from 50V (US1A) to 1000V (US1M) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE US1M R3 US1M R3 US1M R3G R3 G Green compound US1M US1MHR3 H R3 AEC-Q101 qualified US1M RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG.1 MAXIMUM FORWARD CURRENT DERATING FIG. 2 MAXIMUM NON-REPETITIVE FORWARD CURVE 1.5 SURGE CURRENT 50 8.3ms Single Half Sine Wave 40 1 30 20 0.5 RESISTIVE OR 10 INDUCTIVE LOAD 0 0 0 255075 100 125 150 175 1 10 100 o LEAD TEMPERATURE ( C) NUMBER OF CYCLES AT 60 Hz FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 10 100 TJ=100 US1A-US1G 10 1 1 TJ=25 0. 1 US1J-US1M PULSE WIDTH=300s 1% DUTY CYCLE 0. 01 0. 1 0 20 406080 100 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1405051 Version: J14 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) PEAK FORWARD SURGE INSTANTANEOUS REVERSE CURRENT (A) CURRENT (A)