126289-1 TE Connectivity

FJP13009 High-Voltage Fast-Switching NPN Power Transistor September 2014 FJP13009 High-Voltage Fast-Switching NPN Power Transistor Description Features High-Voltage Capability The FJP13009 is a 700 V, 12 A NPN silicon epitaxial pla- High Switching Speed nar transistor. The FJP13009 is available with multiple h bin classes for ease of design use. The FJP13009 is FE designed for high speed switching applications which uti- lizes the industry standard TO-220 package offering flex- ibility in design and excellent power dissipation. Applications Electronic Ballast Switching Regulator Motor Control Switched Mode Power Supply TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information (1) Part Number Top Mark Package Packing Method FJP13009TU J13009 TO-220 3L Rail FJP13009H2TU J13009-2 TO-220 3L Rail Notes: 1. The affix -H2 means the h classification. The suffix -TU means the tube packing method. FE 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP13009 Rev. 1.2.1 FJP13009 High-Voltage Fast-Switching NPN Power Transistor (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. C Symbol Parameter Value Unit V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 12 A C I Collector Current (Pulse) 24 A CP I Base Current 6 A B P Total Device Dissipation (T = 25C) 100 W D C T Junction Temperature 150 C J T Storage Temperature Range -65 to +150 C STG Note: 2. These ratings are based on a maximum junction temperature of 150C. These are steady-state limits. Fairchild Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations. Electrical Characteristics Values are at T = 25C unless otherwise noted. C Symbol Parameter Conditions Min. Typ. Max Unit V (sus) Collector-Emitter Sustaining Voltage I = 10 mA, I = 0 400 V CEO C B I Emitter Cut-Off Current V = 9 V, I = 0 1 mA EBO EB C h V = 5 V, I = 5 A 8 40 FE1 CE C (3) DC Current Gain h V = 5 V, I = 8 A 6 30 FE2 CE C I = 5 A, I = 1 A 1.0 C B Collector-Emitter Saturation V (sat) I = 8 A, I = 1.6 A 1.5 V (3) CE C B Voltage I = 12 A, I = 3 A 3.0 C B I = 5 A, I = 1 A 1.2 C B (3) V (sat) Base-Emitter Saturation Voltage V BE I = 8 A, I = 1.6 A 1.6 C B C Output Capacitance V = 10 V, f = 0.1 MHz 180 pF ob CB f Current Gain Bandwidth Product V = 10 V, I = 0.5 A 4 MHz T CE C t Turn-On Time 1.1 ON V = 125 V, I = 8 A, CC C t Storage Time I = - I = 1.6 A, 3.0 s STG B1 B2 R = 15.6 L t Fall Time 0.7 F Note: 3. Pulse test: pulse width 300 s, duty cycle 2% h Classification FE Classification H1 H2 h 8 ~ 17 15 ~ 28 FE1 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP13009 Rev. 1.2.1 2