FJP13009 High-Voltage Fast-Switching NPN Power Transistor
September 2014
FJP13009
High-Voltage Fast-Switching NPN Power Transistor
Description
Features
High-Voltage Capability
The FJP13009 is a 700 V, 12 A NPN silicon epitaxial pla-
High Switching Speed nar transistor. The FJP13009 is available with multiple
h bin classes for ease of design use. The FJP13009 is
FE
designed for high speed switching applications which uti-
lizes the industry standard TO-220 package offering flex-
ibility in design and excellent power dissipation.
Applications
Electronic Ballast
Switching Regulator
Motor Control
Switched Mode Power Supply
TO-220
1
1.Base 2.Collector 3.Emitter
Ordering Information
(1)
Part Number Top Mark Package Packing Method
FJP13009TU J13009 TO-220 3L Rail
FJP13009H2TU J13009-2 TO-220 3L Rail
Notes:
1. The affix -H2 means the h classification. The suffix -TU means the tube packing method.
FE
2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP13009 Rev. 1.2.1 FJP13009 High-Voltage Fast-Switching NPN Power Transistor
(2)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
C
Symbol Parameter Value Unit
V Collector-Base Voltage 700 V
CBO
V Collector-Emitter Voltage 400 V
CEO
V Emitter-Base Voltage 9 V
EBO
I Collector Current (DC) 12 A
C
I Collector Current (Pulse) 24 A
CP
I Base Current 6 A
B
P Total Device Dissipation (T = 25C) 100 W
D C
T Junction Temperature 150 C
J
T Storage Temperature Range -65 to +150 C
STG
Note:
2. These ratings are based on a maximum junction temperature of 150C. These are steady-state limits. Fairchild
Semiconductor should be consulted on application involving pulsed or low-duty-cycle operations.
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
C
Symbol Parameter Conditions Min. Typ. Max Unit
V (sus) Collector-Emitter Sustaining Voltage I = 10 mA, I = 0 400 V
CEO C B
I Emitter Cut-Off Current V = 9 V, I = 0 1 mA
EBO EB C
h V = 5 V, I = 5 A 8 40
FE1 CE C
(3)
DC Current Gain
h V = 5 V, I = 8 A 6 30
FE2 CE C
I = 5 A, I = 1 A 1.0
C B
Collector-Emitter Saturation
V (sat) I = 8 A, I = 1.6 A 1.5 V
(3)
CE C B
Voltage
I = 12 A, I = 3 A 3.0
C B
I = 5 A, I = 1 A 1.2
C B
(3)
V (sat) Base-Emitter Saturation Voltage V
BE
I = 8 A, I = 1.6 A 1.6
C B
C Output Capacitance V = 10 V, f = 0.1 MHz 180 pF
ob CB
f Current Gain Bandwidth Product V = 10 V, I = 0.5 A 4 MHz
T CE C
t Turn-On Time 1.1
ON
V = 125 V, I = 8 A,
CC C
t Storage Time I = - I = 1.6 A, 3.0 s
STG B1 B2
R = 15.6
L
t Fall Time 0.7
F
Note:
3. Pulse test: pulse width 300 s, duty cycle 2%
h Classification
FE
Classification H1 H2
h 8 ~ 17 15 ~ 28
FE1
2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJP13009 Rev. 1.2.1 2