C0G (NP0) Dielectric General Specifications C0G (NP0) is the most popular formulation of the temperature-compensating, EIA Class I ceramic materials. Modern C0G (NP0) formulations contain neodymium, samarium and other rare earth oxides. C0G (NP0) ceramics offer one of the most stable capacitor dielectrics available. Capacitance change with temperature is 0 30ppm/C which is less than 0.3% C from -55C to +125C. Capacitance drift or hysteresis for C0G (NP0) ceramics is negligible at less than 0.05% versus up to 2% for films. Typical capacitance change with life is less than 0.1% for C0G (NP0), one-fifth that shown by most other dielectrics. C0G (NP0) formulations show no aging characteristics. PART NUMBER (see page 2 for complete part number explanation) 0805 A 101 J A T 2 A 5 Size Dielectric Capacitance Capacitance Failure Terminations Packaging Special Voltage ( x ) C0G (NP0) = A Code (In pF) Tolerance Rate 2 = 7 Reel Code 6.3V = 6 T = Plated Ni B = .10 pF (<10pF) A = Not 4 = 13 Reel A = Std. 10V = Z 2 Sig. Digits + and Sn C = .25 pF (<10pF) Applicable U = 4mm TR Product 16V = Y Number of D = .50 pF (<10pF) (01005) 25V = 3 Zeros Contact F = 1% ( 10 pF) 50V = 5 Factory For G = 2% ( 10 pF) 100V = 1 1 = Pd/Ag Term J = 5% 200V = 2 7 = Gold Plated K = 10% 500V = 7 Contact Factory NOT RoHS COMPLIANT For Multiples NOTE: Contact factory for availability of Termination and Tolerance Options for Specific Part Numbers. Contact factory for non-specified capacitance values. Temperature Coefficient Capacitance vs. Frequency Insulation Resistance vs Temperature 10,000 +2 Typical Capacitance Change Envelope: 0 30 ppm/C +1 1,000 +0.5 0 0 -1 100 -0.5 -2 0 1KHz -55 -35 -15 +5 +25 +45 +65 +85 +105 +125 10 KHz 100 KHz 1 MHz 10 MHz 0 20 40 60 80 100 Frequency Temperature C Temperature C Variation of Impedance with Cap Value Variation of Impedance with Ceramic Formulation Variation of Impedance with Chip Size Impedance vs. Frequency Impedance vs. Frequency Impedance vs. Frequency 0805 - C0G (NP0) 1000 pF - C0G (NP0) 1000 pF - C0G (NP0) vs X7R 10 pF vs. 100 pF vs. 1000 pF 0805 100,000 10 10.00 1206 X7R 10,000 0805 NPO 1812 1210 1,000 1.00 1.0 100 0.10 10 pF 10.0 0.1 1.0 100 1000 100 pF 10 0.01 10 100 1000 1000 pF Frequency, MHz 0.1 1 10 100 1000 Frequency, MHz Frequency, MHz 4 % Capacitance Impedance, % Capacitance Impedance, Insulation Resistance (Ohm-Farads) Impedance, C0G (NP0) Dielectric Specifications and Test Methods Parameter/Test NP0 Specification Limits Measuring Conditions Operating Temperature Range -55C to +125C Temperature Cycle Chamber Capacitance Within specified tolerance Freq.: 1.0 MHz 10% for cap 1000 pF <30 pF: Q 400+20 x Cap Value 1.0 kHz 10% for cap > 1000 pF Q 30 pF: Q 1000 Voltage: 1.0Vrms .2V 100,000M or 1000M - F, Charge device with rated voltage for Insulation Resistance whichever is less 60 5 secs room temp/humidity Charge device with 300% of rated voltage for Dielectric Strength No breakdown or visual defects 1-5 seconds, w/charge and discharge current limited to 50 mA (max) Note: Charge device with 150% of rated voltage for 500V devices. Appearance No defects Deflection: 2mm Capacitance Test Time: 30 seconds 5% or .5 pF, whichever is greater Resistance to Variation 1mm/sec Flexure Q Meets Initial Values (As Above) Stresses Insulation Initial Value x 0.3 90 mm Resistance 95% of each terminal should be covered Dip device in eutectic solder at 230 5C Solderability with fresh solder for 5.0 0.5 seconds Appearance No defects, <25% leaching of either end terminal Capacitance 2.5% or .25 pF, whichever is greater Variation Dip device in eutectic solder at 260C for 60 seconds. Store at room temperature for 24 2 Resistance to Q Meets Initial Values (As Above) Solder Heat hours before measuring electrical properties. Insulation Meets Initial Values (As Above) Resistance Dielectric Meets Initial Values (As Above) Strength Appearance No visual defects Step 1: -55C 2 30 3 minutes Capacitance 2.5% or .25 pF, whichever is greater Step 2: Room Temp 3 minutes Variation Thermal Q Meets Initial Values (As Above) Step 3: +125C 2 30 3 minutes Shock Insulation Meets Initial Values (As Above) Step 4: Room Temp 3 minutes Resistance Dielectric Repeat for 5 cycles and measure after Meets Initial Values (As Above) Strength 24 hours at room temperature Appearance No visual defects Capacitance 3.0% or .3 pF, whichever is greater Variation Charge device with twice rated voltage in 30 pF: Q 350 test chamber set at 125C 2C Q Load Life 10 pF, <30 pF: Q 275 +5C/2 for 1000 hours (+48, -0). (C=Nominal Cap) <10 pF: Q 200 +10C Insulation Remove from test chamber and stabilize at Initial Value x 0.3 (See Above) Resistance room temperature for 24 hours Dielectric before measuring. Meets Initial Values (As Above) Strength Appearance No visual defects Capacitance 5.0% or .5 pF, whichever is greater Variation Store in a test chamber set at 85C 2C/ 30 pF: Q 350 85% 5% relative humidity for 1000 hours Load Q 10 pF, <30 pF: Q 275 +5C/2 (+48, -0) with rated voltage applied. Humidity <10 pF: Q 200 +10C Insulation Remove from chamber and stabilize at Initial Value x 0.3 (See Above) Resistance room temperature for 24 2 hours Dielectric before measuring. Meets Initial Values (As Above) Strength 5