BFP182W
Low Noise Silicon Bipolar RF Transistor
For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to 20 mA
2
4
1
f = 8 GHz, NF = 0.9 dB at 900 MHz
T min
Pb-free (RoHS compliant) and halogen-free package
with visible leads
Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP182W RGs
1=E 2=C 3=E 4 = B - - SOT343
Maximum Ratings at T = 25 C, unless otherwise specified
A
Parameter Symbol Value Unit
12 V
Collector-emitter voltage V
CEO
20
Collector-emitter voltage V
CES
20
Collector-base voltage V
CBO
2
Emitter-base voltage V
EBO
35 mA
Collector current I
C
4
Base current I
B
1)
250 mW
Total power dissipation P
tot
T 91 C
S
150 C
Junction temperature T
J
Storage temperature T -55 ... 150
Stg
Thermal Resistance
Parameter Symbol Value Unit
2)
K/W
Junction - soldering point R 235
thJS
1
T is measured on the collector lead at the soldering point to the pcb
S
2
For the definition of R please refer to Application Note AN077 (Thermal Resistance Calculation)
thJS
1 2013-07-25BFP182W
Electrical Characteristics at T = 25 C, unless otherwise specified
A
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
12 - - V
Collector-emitter breakdown voltage V
(BR)CEO
I = 1 mA, I = 0
C B
- - 100 A
Collector-emitter cutoff current I
CES
V = 20 V, V = 0
CE BE
- - 100 nA
Collector-base cutoff current I
CBO
V = 10 V, I = 0
CB E
- - 1 A
Emitter-base cutoff current I
EBO
V = 1 V, I = 0
EB C
70 100 140 -
DC current gain h
FE
I = 10 mA, V = 8 V, pulse measured
C CE
2 2013-07-25