G-MRCO-017 TE Connectivity

MS32 Switching Sensor SPECIFICATIONS AMR Switching-Sensor 3 TDFN Outline 2.5x2.5x0.8 mm Temperature Compensated Switching Point Low Power Consumption The MS32 is a magnetic field sensor which is built in the form of a Wheatstone bridge. Each of its four resistors is made from Permalloy, a material that shows the anisotropic magneto resistance effect. An unidirectional magnetic field in the surface parallel to the chip (x-y plane) along the y-axis will deliver a field dependent output signal. A magnetic switching point, which is almost independent on temperature is typically set to Hs=1.85 kA/m. In addition, the characteristic curve is linear over a wide magnetic field range. Thus, the new MS32 simplifies the adaption of the sensor to different mechanical and magnetical environments. The sensor die is packaged in a TDFN package. -20C 8 +30C 6 +80C 4 Hs-range 2 H kA/m 0 sensitivity 0 1 2 3 4 5 6 7 -2 -4 Figure 1: Characteristic curves for MS32 at different ambient temperatures (-20C, +30C, -6 +80C) sw itching field Hs FEATURES APPLICATIONS Sensor based on solid state Contactless position detection (presence, magnetoresistance effect open/close) Unipolar signal output Industrial Linear field response Consumer High sensitivity, low hysteresis Automotive Temperature compensated switching point Small stroke pneumatic cylinders Low power consumption due to high Cover positions of Notebooks and Mobiles bridge resistance Doors, windows etc. Supply voltage up to 30 V Small TDFN package SENSOR SOLUTIONS ///MS32 Rev 6 06/2017 Page 1 Vo in mv/V output amplitudeMS3 2 Switching Sensor CHARACTERISTIC VALUES Parameter Condition Symbol Min Typ Max Unit Mechanical dimensions Length X 2.5 mm Width Y 2.5 mm Height Z 0.75 mm 2 Pad size 7) 0.25 x 0.30 mm Operating limits Max. supply voltage V 30 V CC, MAX Temp. compensation range T -25 +85 C COMP Operating temperature T -45 +125 C OP Storage temperature T -45 +150 C ST Stress above one or more of the limiting values may cause permanent damage to the device. Exposure to limiting values for extended periods may affect device reliability. Parameter Condition Symbol Min Typ Max Unit Sensor specification (VCC = 5 V, T = 30 C) 5 30 Supply voltage VCC V Resistance R 10300 11500 B Offset V /V -4 -1.5 mV/V OFF CC Sensitivity 1) S 2 3 (mV/V)/(kA/m) 8 Output amplitude 2) VMAX mV/V 0.9 Hysteresis ( V0=0) 3) Hyst. mV/V 6) Sensor specification (T = -25 C +85C Conditions A & B) -0.35 TC of amplitude TCSV %/K +0.35 TC of bridge resistance TCBR %/K Switching field 5) 4) Hs 1.40 1.85 2.30 kA/m All parameters are measured on wafer level. 1) average gradient in the range 1.0 - 2.0 kA/m 2) difference between output voltage/supply voltage measured at H = 7 kA/m and H = 0 kA/m 3) hysteresis in kA/m = hysteresis in mV/V /S 4) switching voltage = 0 mV/V 5) switching field = magnetic field at switching voltage 6) values at 25C can be determined by linear extrapolation from +30C- and +85C-values. 7) recommended solder reflow process according to IPC/JEDEC J-STD-020D (Pb-Free Process) SENSOR SOLUTIONS /// MS32 Rev 6 06/2017 Page 2