SERIES
CENTIGRID
136C
ESTABLISHED RELIABILITY
RELAY
DPDT
SENSITIVE CMOS COMPATIBLE
SERIES
RELAY TYPE
DESIGNATION
DPDT sensitive relay with internal power MOSFET driver, Zener diode
136C
gate protection, and diode coil suppression
INTERNAL CONSTRUCTION DESCRIPTION
UNI-FRAME
The sensitive 136C Centigrid relay is an ultraminiature, hermetically sealed,
armature relay capable of being directly driven by most IC logic families. Its low
UPPER
profile height and .100" grid spaced terminals, which precludes the need for
STATIONARY
ARMATURE
CONTACT spreader pads, make it ideal for applications where extreme packaging density
and/or close PC board spacing are required.
The basic concept and internal mechanical structure are similar to the 114 DPDT
relay. The following unique construction features and manufacturing
LOWER
techniques provide overall high reliability and excellent resistance to
STATIONARY
CONTACT environmental extremes:
All welded construction.
MOSFET, ZENER DIODE
Unique uni-frame design providing high magnetic efficiency and mechanical
AND SUPPRESSION
DIODE
rigidity.
High force/mass ratios for resistance to shock and vibration.
Advanced cleaning techniques provide maximum assurance of internal
cleanliness.
Precious metal alloy contact material with gold plating assures excellent
high current and dry circuit switching capabilities.
The sensitive 136C Centigrid relay has a high resistance coil, thus requiring
extremely low operating power (200 mW, typical). The advantages of reduced
heat dissipation and power supply demands are a plus.
By virtue of its inherently low intercontact capacitance and contact circuit
ENVIRONMENTAL AND
losses, the 136C relay has proven to be an excellent ultraminiature RF switch
PHYSICAL SPECIFICATIONS
for frequency ranges well into the UHF spectrum. A typical RF application for
Temperature
the Centigrid relay is in handheld radio transceivers, wherein the combined
65C to +125C
(Ambient)
features of good RF performance, small size, low coil power dissipation and
high reliability make it a preferred method of Transmit- Receive switching (see
Vibration
30 gs to 3000 Hz
(General Note 1) Figure 1).
Shock 75 gs,
The sensitive Series 136C utilizes an internal silicon diode for coil
(General Note 1) 6 msec, half-sine
suppression, a Zener diode to protect the MOSFET gate input, and an N-
Acceleration 50 gs
channel enhancement-mode MOSFET chip that enables direct relay
interfacing with most microprocessor and IC logic families (CMOS, TTL and
Enclosure Hermetically sealed
MOS).
Weight 0.18 oz. (5.11g) max.
2003 TELEDYNE RELAYS SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE 136C Page 1
www.teledynerelays.com 136C/1203/Q1
ESTABLISHED RELIABILITYESTABLISHED RELIABILITY
INSERTION LOSS
SERIES 136C
GENERAL ELECTRICAL SPECIFICATIONS (65C to +125C unless otherwise noted) (Notes 2 & 3)
Contact Arrangement 2 Form C (DPDT)
Rated Duty Continuous
Contact Resistance 0.1 ohm max. before life; 0.2 ohm max. after life at 1A/28Vdc (measured 1/8" from header)
Resistive: 1 Amp/28Vdc
Contact Load Ratings (DC)
Inductive: 200 mA/28Vdc (320 mH)
(See Fig. 2 for other DC
Lamp: 100 mA/28Vdc
resistive voltage/current ratings)
Low Level: 10 to 50 A/10 to 50mV
Resistive: 250 mA/115Vac, 60 and 400 Hz (Case not grounded)
Contact Load Ratings (AC)
100 mA/115Vac, 60 and 400 Hz (Case grounded)
10,000,000 cycles (typical) at low level
Contact Life Ratings 1,000,000 cycles (typical) at 0.5A/28Vdc resistive
100,000 cycles min. at all other loads specified above
Contact Overload Rating 2A/28Vdc Resistive (100 cycles min.)
Contact Carry Rating Contact factory
Operate Time 4.0 msec max. at nominal rated coil voltage
Release Time 7.5 msec max.
Contact Bounce 1.5 msec max.
Intercontact Capacitance 0.4 pf typical
Insulation Resistance 10,000 megohms min. between mutually isolated terminals
Dielectric Strength Atmospheric pressure: 500 Vrms/60Hz 70,000 ft.: 125 Vrms/60Hz
Negative Coil Transient (Vdc) 1.0 max
Diode P.I.V. (Vdc) 100 min.
Zener Voltage (Vdc) 17 min. to 23 max.
Zener Leakage Current (A @ 15.2 Vdc) 2.5 max
Gate Voltage to Turn Off (Vdc, Max.) 0.5
Power FET
Characteristics Gate Voltage to Turn On (Vdc, Max.) 3.8 (Note 4)
65C to +125C
Drain-Source Voltage (Vdc, Max.) 55
DETAILED ELECTRICAL SPECIFICATIONS (65C to +125C unless otherwise noted) (Note 3)
BASE PART
NUMBERS 136C-5 136C-6 136C-9 136C-12 136C-18 136C-26
(See Note 8 for full P/N example)
Nom. 5.0 6.0 9.0 12.0 18.0 26.5
Coil Voltage (Vdc)
Max. 5.6 8.0 12.0 16.0 24.0 32.0
Max. 56.0 33.0 26.4 17.7 13.8 10.2
Coil Current (mAdc @25C)
Min. 43.0 27.0 17.8 11.3 8.4 5.8
Nominal Coil Operating Power @ 25C (Milliwatts) 250 180 203 180 203 219
Pick-up Voltage (Vdc) (Note 4) Max. 4.0 4.9 7.3 9.8 14.6 19.5
Min. 0.13 0.18 0.27 0.36 0.54 0.72
Drop-out Voltage (Vdc)
(Note 4)
Max. 2.3 3.2 4.9 6.5 9.8 13.0
PERFORMANCE CURVES
(NOTE 2)
TYPICAL RF PERFORMANCE TYPICAL DC CONTACT RATING (RESISTIVE)
0
.1
300
.2
.3 250
.4
200
10 1.92
20 1.22
150
30 1.07
100
40 1.02
50 1.01
50
60 1.00
70
1.00
.01 0.5 .1 .5 1.0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
LOAD CURRENT (AMPS DC)
FREQUENCY (GHz)
FIGURE 2
FIGURE 1
136C Page 2 SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE 2003 TELEDYNE RELAYS
www.teledynerelays.com 136C/1203/Q1
RETURN LOSS (VSWR)
ISOLATION ACROSS CONTACTS
ISOLATION ACROSS POLES
dB
VSWR
LOAD VOLTAGE (VDC)