X-On Electronics has gained recognition as a prominent supplier of CSD17309Q3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. CSD17309Q3 MOSFETs are a product manufactured by Texas Instruments. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CSD17309Q3 Texas Instruments

Name: CSD17309Q3
Brand: Texas Instruments
SKU: CSD17309Q3_Texas_Instruments
Availability: OutOfStock
Rating: 5 (11 reviews)

CSD17309Q3 electronic component of Texas Instruments

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Part No.	CSD17309Q3
Manufacturer:	Texas Instruments
Category:	MOSFETs
Description:	N-Channel 30 V 20A (Ta), 60A (Tc) 2.8W (Ta) Surface Mount 8-VSON-CLIP (3.3x3.3)
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.507 ea
Line Total: USD 1.51

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

CSD17309Q3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
10 Ship by Wed. 26 Mar to Mon. 31 Mar MOQ : 1 Multiples : 1	1 : USD 1.1576 10 : USD 1.1309 30 : USD 0.9528 100 : USD 0.8444

We are delighted to provide the CSD17309Q3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CSD17309Q3 and other electronic components in the MOSFETs category and beyond.

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HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

A/NSC may also be referenced as

NAT SEMI
NATIONAL SEMI
NATIONAL SEMICONDUCT
National Semiconductor
NS4
NSC
TEXAS
TEXAS INST
TEXAS INST / KLIXON
TEXAS INSTRUMENT
TEXAS INSTRUMENTS
TI
TI9

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Manufacturer Texas Instruments Texas Instruments
Product Category MOSFETs MOSFETs
RoHS - XON E E
Id - Continuous Drain Current 60 A 60 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 5.4 mOhms 5.4 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 1.2 V 1.2 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2.8 W 2.8 W
Mounting Style Smd/Smt Smd/Smt
Package / Case SON - 8 SON - 8
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 8 V 8 V
Qg - Gate Charge 7.5 nC 7.5 nC
Channel Mode Enhancement Enhancement
Tradename Nexfet Nexfet
Configuration Single Single
Series Csd17309q3 Csd17309q3
Brand Texas Instruments Texas Instruments
Continuous Drain Current 20 A 20 A
Drain-Source Breakdown Voltage 30 V 30 V
Gate-Source Breakdown Voltage - 8 v ; + 10 V - 8 v ; + 10 V
Power Dissipation 2.8 W 2.8 W
Rds On 4.9 Mohms 4.9 Mohms
Fall Time 3.6 ns 3.6 ns
Rise Time 9.9 ns 9.9 ns
Factory Pack Quantity : 2500 2500
Height 1 mm 1 mm
Length 3.3 mm 3.3 mm
Transistor Type 1 N - Channel 1 N - Channel
Type Power Mosfet Power Mosfet
Width 3.3 mm 3.3 mm
Forward Transconductance - Min 67 S 67 S
Cnhts 8541210000 8541210000
Development Kit Dlpdlcr4710evm - G2 ; Tps65982 - Evm ; Tps65983evm Dlpdlcr4710evm - G2 ; Tps65982 - Evm ; Tps65983evm
Hts Code 8541290095 8541290095