6N138,6N139 TOSHIBA Photocoupler IRED & Photo IC 6N138, 6N139 Current Loop Driver Unit: mm Low Input Current Line Receiver CMOS Logic Interface The TOSHIBA 6N138 and 6N139 consists of an infrared emitting diode coupled with a split-Darlington output configuration. A high speed Ired manufactured with an unique LPE junction, has the virtue of fast rise and fall time at low drive current. Isolation voltage: 2500 Vrms (min) Current transfer ratio : 6N138 300% (min) (I =1.6mA) F : 6N139 400% (min) (I =0.5mA) F Switching time: 6N138 t = 10s (max) PHL t = 35s (max) PLH 6N139 t = 1s (max) PHL t = 7s (max) PLH UL-recognized: UL 1577, File No.E67349 TOSHIBA 1110C4S Pin Configuration (top view) Weight: 0.54 g (typ.) 1 : N.C. 1 8 2 : Anode 3 : Cathode 7 2 4 : N.C. 5 : Gnd 6 : Output 6 3 7 : Output Base 8 : VCC 4 5 Schematic V CC 8 I 2 F I CC + I O 6 V F V O - 3 5 I 7 B GND V B Start of commercial production 1988-02 2019 1 2019-06-10 Toshiba Electronic Devices & Storage Corporation 6N138,6N139 Absolute Maximum Ratings (*) (Ta = 0C to + 70C) Characteristics Symbol Rating Unit Forward current (Note 1) I 20 mA F (*1) Pulse forward current I 40 mA FP (*2) Total pulse forward current I 1 A FP Reverse voltage V 5 V R Diode power dissipation (Note 2) P 35 mW D Output current (Note 3) I 60 mA O Emitterbase reverse voltage V 0.5 V EB (*3) Supply voltage V 0.5 to 18 V CC (*3) Output voltage V 0.5 to 18 V O Output power dissipation (Note 4) P 100 mW O Operating temperature range T 0 to 70 C opr Storage temperature range T 55 to 125 C stg (*4) Lead solder temperature (10s) T 260 C sol 2500 V rms (**) Isolation voltage (60s, R.H. 60%) BV S 3540 V dc Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (*) JEDEC registered data (**) Not registered JEDEC (*1) 50 % duty cycle, 1 ms pulse width (*2) Pulse width 1 s, 300 pps (*3) 6N138 0.5 to 7 V (*4) 1.6 mm below seating plane 2019 2 2019-06-10 Toshiba Electronic Devices & Storage Corporation Detector LED