Product Information

DF2S12FU,H3F

DF2S12FU,H3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Standard Type Protection Diode

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0244 ea
Line Total: USD 73.2

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 3000
Multiples : 3000

Stock Image

DF2S12FU,H3F
Toshiba

3000 : USD 0.1345
6000 : USD 0.1337
9000 : USD 0.1329
12000 : USD 0.1322
15000 : USD 0.1314
24000 : USD 0.1306
30000 : USD 0.1298
75000 : USD 0.129
150000 : USD 0.1281

0 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

DF2S12FU,H3F
Toshiba

1 : USD 0.4132
10 : USD 0.3697
100 : USD 0.0658
1000 : USD 0.0358
3000 : USD 0.0228

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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DF2S12FU TOSHIBA Diodes for Protecting against ESD DF2S12FU Unit: mm Product for Use Only as Protection against Electrostatic Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. Two-pin ultra-small packages are suitable for higher mounting densities. Small total capacitance: CT = 15pF (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit USC JEDEC Power dissipation P 150 mW JEITA Junction temperature T 125 C j TOSHIBA 1-1E1A Storage temperature range T 55 to 125 C stg Weight: 4.5 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5mA 11.4 12.0 12.6 V Z Z Dynamic impedance Z I = 5mA 10 Z Z Knee dynamic impedance Z I = 0.5mA 20 ZK Z Reverse current I V = 9V 0.05 A R R Total capacitance C V = 0V , f=1MHz 15 pF T R Marking Equivalent Circuit (Top View) Z L Start of commercial production 1998-09 1 2014-03-01 DF2S12FU Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 20 kV (contact discharge) Criterion: No damage to device elements 2 2014-03-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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