X-On Electronics has gained recognition as a prominent supplier of TC58NVG1S3EBAI5 NAND Flash across the USA, India, Europe, Australia, and various other global locations. TC58NVG1S3EBAI5 NAND Flash are a product manufactured by Toshiba. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

TC58NVG1S3EBAI5 Toshiba

TC58NVG1S3EBAI5 electronic component of Toshiba
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Part No.TC58NVG1S3EBAI5
Manufacturer: Toshiba
Category: NAND Flash
Description: Flash Memory 2Gb 3.3V SLC NAND Flash EEPROM
Datasheet: TC58NVG1S3EBAI5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 5.2918
10 : USD 4.8884
100 : USD 4.3901
180 : USD 4.3664
540 : USD 4.1528
1080 : USD 3.9866
2520 : USD 3.8561
5040 : USD 3.8087
10080 : USD 3.7019
N/A

Obsolete
   
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We are delighted to provide the TC58NVG1S3EBAI5 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TC58NVG1S3EBAI5 and other electronic components in the NAND Flash category and beyond.

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TC58NVG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT (256M 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable 2 Read-Only Memory (NAND E PROM) organized as (2048 + 64) bytes 64 pages 2048blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes 64 pages). The TC58NVG1S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES Organization x8 Memory cell array 2112 128K 8 Register 2112 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 2008 blocks Max 2048 blocks Power supply V = 2.7V to 3.6V CC Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=100pF) Program/Erase time Auto Page Program 300 s/page typ. Auto Block Erase 2.5 ms/block typ. Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 A max Package P-TFBGA63-1013-0.80AZ (Weight: 0.18 g typ.) 1 2011-03-01C TC58NVG1S3EBAI5 PIN ASSIGNMENT (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 A NC NC NC NC B NC NC NC C WP ALE V CE WERY/BY SS D NC RE CLE NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC NC NC NC NC NC H NC I/O1 NC NC NC V CC J NC I/O2 NC V I/O6 I/O8 CC K V I/O3 I/O4 I/O5 I/O7 V SS SS L NC NC NC NC M NC NC NC NC PIN NAMES I/O1 to I/O8 I/O port CE Chip enable WE Write enable RE Read enable CLE Command latch enable ALE Address latch enable WP Write protect RY/BY Ready/Busy V Power supply CC V Ground SS 2 2011-03-01C

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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