TC74ACT00P(F) Toshiba

TC74ACT00P/F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74ACT00P, TC74ACT00F, TC74ACT00FT Quad 2-Input NAND Gate The TC74ACT00 is an advanced high speed CMOS 2-INPUT TC74ACT00P NAND GATE fabricated with silicon gate and double-layer metal 2 wiring C MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. This device may be used as a level converter for interfacing TTL or NMOS to High Speed CMOS. The inputs are compatible with TTL, NMOS and CMOS output voltage levels. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC74ACT00F Features High speed: t = 4.0 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 4 A (max) at Ta = 25C CC Compatible with TTL outputs: V = 0.8 V (max) IL V = 2.0 V (min) IH Symmetrical output impedance: I = I = 24 mA (min) OH OL Capability of driving 50 TC74ACT00FT transmission lines. Balanced propagation delays: t t pLH pHL Pin and function compatible with 74F00 Weight DIP14-P-300-2.54 : 0.96 g (typ.) SOP14-P-300-1.27A : 0.18 g (typ.) TSSOP14-P-0044-0.65A : 0.06 g (typ.) Start of commercial production 1988-10 1 2014-03-01 TC74ACT00P/F/FT Pin Assignment IEC Logic Symbol (1) 1A & (3) 1Y 1A 1 14 V (2) CC 1B (4) 2A (6) 1B 2 13 4B 2Y (5) 2B (9) 1Y 12 4A 3A 3 (8) 3Y (10) 3B 2A 4 11 4Y (12) 4A (11) 4Y (13) 4B 2B 5 10 3B 2Y 6 9 3A GND 7 8 3Y (top view) Truth Table A B Y L L H L H H H L H H H L Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to V + 0.5 V IN CC DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 50 mA OK DC output current I 50 mA OUT DC V /ground current I 100 mA CC CC Power dissipation P 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW D Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = 40 to 65C. From Ta = 65 to 85C a derating factor of 10 mW/C should be applied up to 300 mW. 2 2014-03-01